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Electrical, optical and structural properties of AgInSe 2 thin films deposited on glass substrates are studied for different substrate and post-deposition annealing temperatures. The substrate temperature is varied in the range 300-773 K. The activation energy (E A ) has been calculated for the films using the Arrhenius plot and the bandgap (E g ) has been obtained from the optical transmission spectra. The activation energy varied from 76 meV to 330 meV for E A1 in the impurity scattering region and for E A2 the value is around 700 meV in the intrinsic region. Optical absorption spectra show variation in the bandgap, varying from 1.18 to 1.42 eV as the substrate temperature varied from 300-773 K. Films deposited at higher substrate temperatures give a = 5.93 Å and c = 11.22 Å for the tetragonal phase. The mean grain size of the films is 0.2 µm for polycrystalline films.

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Several anthraquinones containing the [2-[(2-hydroxyethyl)amino]ethyl]amino, the [2-(dimethylamino)ethyl]amino, and the 2-(dimethylamino)ethoxy groups were prepared. Preparation of a lucanthone analogue, a 7-chloroquinoline derivative, and derivatives of naphthoquinones containing the [2-[(2-hydroxyethyl)amino]ethyl]amino side chain and related amino-substituted side chains was also conducted. It was found that the antineoplastic activity of anthraquinones containing the [2-[(2-hydroxyethyl)amino]ethyl]amino side chain is superior to those containing the tertiary amino side chain. However, the presence of the [2-[(2-hydroxyethyl)amino]ethyl]amino chain is an important, but not a sufficient, factor for good antineoplastic activity, as indicated by the lack of significant biological activity of other ring systems containing this side chain.

Thin films of Nickel Phthalocyanine (NiPc) are fabricated at a base pressure of 10-5m.bar using Hind-Hivac thermal evaporation plant. The films are deposited on to glass substrates at various temperatures 318, 363, 408 and 458K. The optical absorption spectra of these thin films are measured. Present studies reveal that the optical band gap energies of NiPc thin films are highly dependent on the substrate temperatures. The structure and surface morphology of the films deposited on glass substrates of temperatures 303, 363 and 458K are studied using X-ray diffractograms and Scanning Electron Micrographs (SEM), show that there is a change in the crystallinity and surface morphology due to change in the substrate temperatures. Full width at half maximum (FWHM) intensity of the diffraction peaks is also found reduced with increasing substrate temperatures. Scanning electron micrographs show that these crystals are fiber like at high substrate temperatures. The optical band gap increases with increase in substrate temperature and is then reduced with fiber-like grains at 408K. The band gap increases again at 458K with full of fiber like grains. Trap energy levels are also observed for these films.

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