The effects of strong illumination and radiation fluence on the annealing behavior of the E center in electron-irradiated phosphorus-doped float-zoned silicon were studied by Hall-effect measurement. Illumination of the sample during anneal increased the rate of recovery significantly. Increasing the radiation fluence and, hence, the level of the induced-carrier compensation, also increased the rate of anneal. These results were found to be consistent with a previously proposed model in which the charge state of the defect was found to be a major determinant of the activation energy of recovery.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.