Annealing of Electron-Irradiated <i>n</i>-Type Silicon: Illumination and Fluence Dependence

Kimerling, Lionel C.; Carnes, C.P.

doi:10.1063/1.1660768

Cited by 18 publications

(5 citation statements)

References 9 publications

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“…But we now know from the work of Watkins (1975b) that the boron interstitial is a mobile species at room temperature and it is strange that there was no immediate formation of boronphosphorus nearest-neighbour pairs. These pair defects have been well characterised by their local mode absorption (Newman and Smith 1967, Tsvetov et a1 1967, Pfeuty 1968, Newman 1973 and are generated when samples are annealed at a higher temperature of 200"C, corresponding to the anneal of [P-VI centres (see 0 5.2) (also Kimmerling and Carnes 1971).…”

Section: High Doses Of Electron Irradiation At Room Temperaturementioning

confidence: 99%

Defects in silicon

Newman

1982

Rep. Prog. Phys.

137

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The method of obtaining pure polycrystalline silicon is described, followed by short accounts of how this material is converted into single-crystal form either by the Czochralski (cz) pulling method or the float-zone (FZ) method. It is shown that the silicon contains various impurities including oxygen, carbon, boron and possibly hydrogen. If a silicon nitride crucible is used instead of silica for the growth of cz crystals they contain nitrogen. Crystals also contain structural defects derived from the aggregation of intrinsic point defects as they cool from the melting temperature. The defects and impurities often show a non-homogeneous distribution in the form of helical swirls. Heat treatment of silicon-containing oxygen leads to the clustering of this impurity. At 450 "C there is formation of small complexes that act as shallow donors. Investigations using IR and ESR spectroscopy have so far failed to determine the atomic configuration of the defects. Heating at higher temperatures causes widescale precipitation of oxygen. There are interactions with carbon and there can be formation of silicon carbide precipitates. Contamination from Cu, Au, Fe, etc, can occur during these treatments and methods for gettering these metals are discussed, involving dislocations and silica precipitates. Low-temperature irradiations produce vacancies and self -interstitials which combine with impurities to form complexes on heating from 4 K to 300 K. Certain defects, including vacancies and impurity interstitials, show athermal migration and unexpected electrical properties. Evidence is presented to illustrate the possible charge states of self-interstitials. Damage produced by fast neutrons is discussed next, followed by a brief account of neutron transmutation doping whereby naturally occurring 30Si is converted to 31P by the capture of thermal neutrons. Finally, some aspects of high-temperature diffusion are discussed and attempts are made to correlate the data with that derived from the irradiation studies. It is concluded that self-interstitials are important defects in silicon and oxidation of a surface generates a large flux of non-equilibrium defects which diffuse into the bulk crystal, leading to enhanced impurity diffusion and the growth of structural defects.

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Section: High Doses Of Electron Irradiation At Room Temperaturementioning

confidence: 99%

Defects in silicon

Newman

1982

Rep. Prog. Phys.

137

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“…AS------3.3k [41] P(1) =VGa x+PP; AH-----2.5eV AS=--l.7k [42] Ga(1) = VGa x -t-Gap -2 + 2e+; AH = 2.5 eV-t-2AHcv, AS = 9.6k [43] ) unless CC License in place (see abstract …”

Section: The Enthalpy Per Carrier Would Be H(e +) -= Ef --Hv and H(e-mentioning

confidence: 99%

“…For GaP one finds (32)(33) AS(PGa +2) = AS(Gap -D) -----2AScv(GaP) = 12.9k [40] Therefore, we calculate the enthalpies and entropies of the real reactions [24]- [27] to be Ga(1) =Ga~a+Vpx; ~Hml.8eV AS------3.3k [41] P(1) =VGa x+PP; AH-----2.5eV AS=--l.7k [42] Ga(1) = VGa x -t-Gap -2 + 2e+; AH = 2.5 eV-t-2AHcv, AS = 9.6k [43] P(1) --PGa +2 ~-Vp x n u 2e-; hH = 2.8 eV + 2hHev, aS = ll.2k [44] The above reactions are not adequate to describe the data obtained by measuring the deviations from stoichiometry (14,15). Indeed, one should not expect them to be adequate because it seems unlikely that the vacancies are predominately in their neutral state during the growth process.…”

Section: Comporison With Experimentsmentioning

confidence: 99%

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Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type Semiconductors

Vechten¹

1975

J. Electrochem. Soc.

215

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The few theoretical treatments which have been successful in predicting the thermodynamic parameters of substitutional impurities are examined for their implications regarding antisite defects, BA or An, and antistructure pairs, BAAB in AB semiconductors. All such theories predict a large concentration of BAAs x, especially in III-V's. All predict that BA + or BA +2 and As-or As -2 should be important to the properties of III-V's. Results of the Phillips-Van Vechten dielectric two-band model are presented for 23 common semiconductors. These are combined with results for vacancies in the. accompanying paper to give a detailed account of native defects in GaP both during crystal growth and as the sample cools. The existence curve is calculated and compared with experiment. The interaction between vacancies and antisite defects is invoked to explain why deviations from stoichiometry have slight effects on carrier concentration but large effects on luminescent efficiency.

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“…The effect of illumination on E-centre annealing in electron-irradiated silicon has been studied in [34] In illuminating such samples with white light (hv > Eg) prevalent hole capture in the E-centre effectively lowers the E'ermi level below the E-centre level, thus increasing the fraction of the neutral complexes and their migration rate.…”

Section: Photostimulated Annealing Of Radiation Defectsmentioning

confidence: 99%

Photostimulated Diffusion in Semiconductors

Dzhafaröv

1983

Phys. Stat. Sol. (a)

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Annealing of Electron-Irradiated n-Type Silicon: Illumination and Fluence Dependence

Cited by 18 publications

References 9 publications

Defects in silicon

Defects in silicon

Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type Semiconductors

Photostimulated Diffusion in Semiconductors

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