Annealing of Electron-Irradiated<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Silicon. I. Donor Concentration Dependence

Kimerling, Lionel C.; Deangelis, H. M.; Carnes, C.P.

doi:10.1103/physrevb.3.427

Cited by 68 publications

(13 citation statements)

References 12 publications

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“…36 -39 Even if it is difficult to directly resolve the contributions of these additional defects by means of conventional DLTS their thermal stability is less than that of V 2 . 17,35 Both VP and C i P s disappear rapidly at 150°C and as shown in Fig. 1, the amplitude of the E C Ϫ0.42 eV peak decreases by ϳ10% after 30 min, consistent with the magnitude expected for these centers in moderately doped (͓ P s ͔ϳ10 15 cm Ϫ3 ) CZ samples.…”

supporting

confidence: 61%

“…for a doping concentration of ϳ10 15 cm Ϫ3 , which is about three to four orders of magnitude below that normally used in IR studies (ϳ10 17 -10 18 cm…”

Section: ϫ3mentioning

confidence: 99%

“…In some cases, as for the annealing of the vacancy-phosphorus center, a dependence on doping concentration, illumination, and electric field has also to be taken into account. 17,18 Quantitative studies of the annealing kinetics for the V 2 and VO centers have mainly been performed using electronirradiated samples and employing infrared spectroscopy ͑IR͒ or, to some extent, deep-level transient spectroscopy ͑DLTS͒ for the analysis. 3,[19][20][21][22] Despite their fundamental importance, quantitative annealing data for V 2 and VO in ion-implanted samples are scarce.…”

mentioning

confidence: 99%

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Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon

et al. 2001

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Silicon samples of n-type have been implanted at room temperature with 5.6-MeV 28 Si ions to a dose of 2ϫ10 8 cm Ϫ2 and then annealed at temperatures from 100 to 380°C. Both isothermal and isochronal treatments were performed and the annealing kinetics of the prominent divacancy (V 2 ) and vacancy-oxygen ͑VO͒ centers were studied in detail using deep-level transient spectroscopy. The decrease of V 2 centers exhibits first-order kinetics in both Czochralski-grown ͑CZ͒ and float-zone ͑FZ͒ samples, and the data provide strong evidence for a process involving migration of V 2 and subsequent annihilation at trapping centers. The migration energy extracted for V 2 is ϳ1.3 eV and from the shape of the concentration versus depth profiles, an effective diffusion length р0.1 m is obtained. The VO center displays a more complex annealing behavior where interaction with mobile hydrogen ͑H͒ plays a key role through the formation of VOH and VOH 2 centers. Another contribution is migration of VO and trapping by interstitial oxygen atoms in the silicon lattice, giving rise to vacancy-dioxygen pairs. An activation energy of ϳ1.8 eV is deduced for the migration of VO, in close resemblance with results from previous studies using electron-irradiated samples. A model for the annealing of VO, involving only three reactions, is put forward and shown to yield a close quantitative agreement with the experimental data for both CZ and FZ samples over the whole temperature range studied.

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supporting

confidence: 61%

“…for a doping concentration of ϳ10 15 cm Ϫ3 , which is about three to four orders of magnitude below that normally used in IR studies (ϳ10 17 -10 18 cm…”

Section: ϫ3mentioning

confidence: 99%

mentioning

confidence: 99%

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Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon

et al. 2001

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“…AS------3.3k [41] P(1) =VGa x+PP; AH-----2.5eV AS=--l.7k [42] Ga(1) = VGa x -t-Gap -2 + 2e+; AH = 2.5 eV-t-2AHcv, AS = 9.6k [43] ) unless CC License in place (see abstract …”

Section: The Enthalpy Per Carrier Would Be H(e +) -= Ef --Hv and H(e-mentioning

confidence: 99%

“…However, at high temperatures at least one charged state is more numerous iooo than Vsi x for any value of EF(38). This is evidenced by numerous charge state effects in impurity diffusion and defect annealing experiments(42)(43)(44). This results from the entropy of ionization, ~S~ (Vsi)…”

mentioning

confidence: 97%

Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type Semiconductors

Vechten¹

1975

J. Electrochem. Soc.

215

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The few theoretical treatments which have been successful in predicting the thermodynamic parameters of substitutional impurities are examined for their implications regarding antisite defects, BA or An, and antistructure pairs, BAAB in AB semiconductors. All such theories predict a large concentration of BAAs x, especially in III-V's. All predict that BA + or BA +2 and As-or As -2 should be important to the properties of III-V's. Results of the Phillips-Van Vechten dielectric two-band model are presented for 23 common semiconductors. These are combined with results for vacancies in the. accompanying paper to give a detailed account of native defects in GaP both during crystal growth and as the sample cools. The existence curve is calculated and compared with experiment. The interaction between vacancies and antisite defects is invoked to explain why deviations from stoichiometry have slight effects on carrier concentration but large effects on luminescent efficiency.

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Photostimulated Diffusion in Semiconductors

Dzhafaröv

1983

Phys. Stat. Sol. (a)

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Annealing of Electron-Irradiatedn-Type Silicon. I. Donor Concentration Dependence

Cited by 68 publications

References 12 publications

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implantedn-type silicon

Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type Semiconductors

Photostimulated Diffusion in Semiconductors

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