Extremely high-purity InP has been grown in an atmospheric-pressure MOCVD reactor over the unusually large temperature range from 575-700°C. T h e apparent purity of the material was enhanced by the incorporation of atomic hydrogen. At 650°C. a temperature at which many device structures are grown, a 77 K electron mobility of 190 000 cm2 V-' s-' was obtained with an electron concentration of 1.6 x c r r 3 . Removal of the hydrogen resulted in a decrease in the electron mobility and an increase in the electron concentration. After removal of the atomic hydrogen, samples grown at 650 "C had 77 K electron mobilities01 -140000cmZV-' 5 -' at an electron concentration of -3.6 x lO'"cm-'. Analysis of the temperature dependence of t h e electron mobility indicates that the atomic hydrogen, which comes from the thermal decomposition of the phosphine on epilayer cool-down,neutralises both donors and acceptors. The incorporation and removal of hydrogen does not affect the optical characteristics of the material as measured by DhotolumineScence and far-infrared photoconductivity.

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