Pressure dependence of light-hole transport in strained InGaAs/GaAs

Lancefield, D.; Batty, W.; Crookes, C.G.; O’Reilly, Eoin P.; Adams, A.R.; Homewood, K. P.; Sundaram, Ganesh; Nicholas, R.J.; Emeny, M. T.; Whitehouse, C. R.

doi:10.1016/0039-6028(90)90850-8

Cited by 23 publications

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“…The mass reversal in InGaAs/GaAs quantum wells was experimentally observed first by measurements of temperature dependence of the Shubnikov-de Haas oscillations and then confirmed by direct measurements via cyclotron resonance ͑CR͒ technique. [6][7][8] Since the energy separation between the lh and hh bands is relatively small, the dispersion of the hh band is expected to be strongly nonparabolic. 9 So far, however, there are only few systematic studies of the valence-band nonparabolicity, and the situation with the band dispersion remains unclear, while understanding of the valence-band structure is particularly important for the device modeling.…”

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High-field splitting of the cyclotron resonance absorption in strainedp-InGaAs/GaAsquantum wells

et al. 2009

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We report a systematic study of the cyclotron resonance ͑CR͒ absorption of two-dimensional holes in strained InGaAs/GaAs quantum wells ͑QWs͒ in the quantum limit. The energies of the CR transitions are traced as a function of magnetic field up to 55 T. A remarkable CR line splitting was evidenced when the resonant field exceeds 20 T. We analyze our data with a 4 ϫ 4 Luttinger Hamiltonian including strain and QW potentials using two different methods to calculate Luttinger parameters for ternary alloys. We found excellent agreement with the experiment when linear interpolation of the Luttinger parameters is used.

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confidence: 99%