Hi h performance 0.1pm (physical) gate length CMOS with demonstrated at 1.OV-1.5V. Scaling to O.lpm Lgte CMOS is described. At lSV, nMOS strong and nominal Ihve=757 and 700pNpm, and PMOS strong and nominal Ihve=337 and 300pVpm. For high performance at l.OV, n-and PMOS are designed with low VT and higher 1 ,~ (100nA/pm at Lgmn). At lV, nMOS strong and nominal Ihve is 516 and 473pNpm; PMOS strong and nominal Ihve is 220 and 188pNpm. Benchmarking to FOM and CV/I metrics is performed for this l.O-lSV,O.lpm node and prior 1.8-1.5V, 0.18pm nodes. Present l S V , 0 . 1~ CMOS (as well as our recently reported 1.8-lSV, 0 . 1 8~ CMOS) has FOM and CV/I values better than the literature trend. The FOM at VDD=l.OV (max I,H = 100 nNpm) is the same as the 1.5V FOM (max io^= lnA/pm).
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