Nonlinear Behavior and Bias Modulation of an IMPATT Diode Oscillator

Chao, C.; Haddad, G.I.

doi:10.1109/tmtt.1973.1128091

Cited by 4 publications

(1 citation statement)

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“…By varying DC current in a controlled manner, the operating point will move along the load admittance locus, producing changes of RF amplitude and frequency. However, it is a frequently observed phenomenon that, during such tuning, the RF amplitude and frequency may exhibit discontinuities or jumps often with associated hysteresis effects (Kurokawa 1969, Chao andHaddad 1973) in which a given jump occurs at a different current value when current is being increased from when current is being decreased. Such discontinuities are known to be associated with noisy behaviour, as is confirmed in a later section of this paper.…”

Section: Diode-circuit Interactionmentioning

confidence: 99%

The avalanche diode high-level microwave noise source

Forrest¹,

Meeson²

1978

J. Phys. D: Appl. Phys.

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Extends an earlier analytic theory of the microwave avalanche diode (IMPATT) and describes the way in which RF induced, low-frequency negative resistance arises in such devices. With certain microwave circuit constraints, this negative resistance gives rise to a controlled instability which results in a microwave noise spectrum of bandwidth similar in magnitude to the avalanche diode oscillator tuned circuit bandwidth. The noise spectrum is centred on the normal microwave operating frequency of the avalanche diode oscillator and is typically of mW output power level.

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Section: Diode-circuit Interactionmentioning

confidence: 99%