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Linear thermal expansion measurements have been carried out from 6 to 340 K on a high-purity silicon sample using a linear absolute capacitance dilatometer. The accuracy of the measurements varies from ±0.01×10−8 K−1 at the lowest temperatures to ±0.1×10−8 K−1 or 0.1%, whichever is greater, near room temperature, and is sufficient to establish silicon as a thermal expansion standard for these temperatures. The agreement with previous data is satisfactory at low temperatures and excellent above room temperature where laser-interferometry data of comparable accuracy exist. Thermal expansions calculated from ultrasonic and heat-capacity data are preferred below 13 K where experimental problems occurred.

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Silicon, a high melting point, low expansivity, cubic material which can be obtained readily in high purity form, provides an excellent thermal expansion standard. Various absolute determinations of the thermal expansivity of both single crystal and polycrystalline silicon are used to establish a smooth relationship from 90 to 850 K which is believed to be reliable to roughly 10−8 K−1, and which is extrapolated to 1000 K. Values also are suggested for temperatures to absolute zero. Key words: high temperature expansivity; silicon; standard expansivities; thermal expansivity.