1977
DOI: 10.1063/1.323747
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Linear thermal expansion measurements on silicon from 6 to 340 K

Abstract: Linear thermal expansion measurements have been carried out from 6 to 340 K on a high-purity silicon sample using a linear absolute capacitance dilatometer. The accuracy of the measurements varies from ±0.01×10−8 K−1 at the lowest temperatures to ±0.1×10−8 K−1 or 0.1%, whichever is greater, near room temperature, and is sufficient to establish silicon as a thermal expansion standard for these temperatures. The agreement with previous data is satisfactory at low temperatures and excellent above room temperature… Show more

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Cited by 301 publications
(179 citation statements)
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“…Between 1.6 K and 2 K the shift in frequency is only 100 Hz (5 × 10 −13 ). Whereas the CTE of an insulating crystal at low temperatures is expected to be positive and proportional to T 3 [13], in the case of silicon its thermal expansion behaviour (expansion turns into contraction between 16.8 K and 124 K) necessarily implies that such a dependence can accurately hold only for T → 0. The value predicted from compressibility and heat capacity measurements is α Si = 4.8 × 10 −13 K −1 (T /K) 3 [13].…”
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confidence: 99%
“…Between 1.6 K and 2 K the shift in frequency is only 100 Hz (5 × 10 −13 ). Whereas the CTE of an insulating crystal at low temperatures is expected to be positive and proportional to T 3 [13], in the case of silicon its thermal expansion behaviour (expansion turns into contraction between 16.8 K and 124 K) necessarily implies that such a dependence can accurately hold only for T → 0. The value predicted from compressibility and heat capacity measurements is α Si = 4.8 × 10 −13 K −1 (T /K) 3 [13].…”
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confidence: 99%
“…(5) was started at room temperature with literature values for the refractive index 11 n, the coefficient of thermal expansion 14 a and the measured sample length L. The iterative evaluation was applied at temperatures above 26 K. This allows a sufficiently high density of (1) is placed in the probe chamber (2) which is surrounded by vacuum in the cryostat (3) to provide a thermal insulation against room temperature. A cooling coil (4) allows the heat extraction by an adjustable liquid helium flow.…”
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confidence: 99%
“…The results are ͑2.8± 1.0͒ ϫ 10 −6 K −1 for the horizontal distance and ͑1.3± 0.4͒ ϫ 10 −6 K −1 for the vertical distance. These values are in the range of the thermal expansion coefficient of silicon, the CCD substrate material, and invar, the metallic support material for the temperatures considered: literature values are ͑0.8− 1.6͒ ϫ 10 −6 K −1 for silicon 10 and ͑1−2͒ ϫ 10 −6 K −1 for invar. 11…”
Section: Temperature Dependence Of the Pixel Distancementioning
confidence: 92%