Highly efficient green, red, and blue perovskite light‐emitting diode based metal‐oxide charge injection layers are demonstrated. This is an important step toward the realization of next‐generation solid‐state lighting and devices for use in full‐color large‐area display applications.

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Here we use triple-cation metal–organic halide perovskite single crystals for the transistor channel of a flash memory device. Moreover, we design and demonstrate a 10 nm thick single-layer nanofloating gate. It consists of a ternary blend of two organic semiconductors, a p-type polyfluorene and an n-type fullerene that form a donor:acceptor interpenetrating network that serves as the charge storage unit, and of an insulating polystyrene that acts as the tunneling dielectric. Under such a framework, we realize the first non-volatile flash memory transistor based on a perovskite channel. This simplified, solution-processed perovskite flash memory displays unique performance metrics such as a large memory window of 30 V, an on/off ratio of 9 × 107, short write/erase times of 50 ms, and a satisfactory retention time exceeding 106 s. The realization of the first flash memory transistor using a single-crystal perovskite channel could be a valuable direction for perovskite electronics research.

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We report the design and fabrication of an amorphous‐indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistor (TFT)‐based high‐speed and ultra‐narrow shift register on a plastic substrate. The shift register consisting 5 TFTs and 1 capacitor is small in physical size which is only 40 μm in width (pitch). At the supply voltage (VDD) of 15 V, the clock frequency of the shift register approaches 166.7 kHz, corresponding to a pulse width of 3 μs. The shift register could be operated under mechanical bending radius of 2mm, making it applicable to flexible high resolution active‐matrix displays.

We report the fabrication and flexibility of the TFTs based on poly-Si and a-IGZO on polyimide (PI). The performances of the TFTs do not degrade upon 10,000 times rolling with 2 mm radius for a-IGZO and 4 mm for poly-Si TFTs. It is found that there is no electrostatic damage for the TFT backplane on PI with a conducting backbone.

Developing an effective scalable fabrication process for perovskite solar cells is urgent to getting perovskite photovoltaic technology market‐ready. Perhaps due to the relatively cost‐effective setup and tunable fabrication processes, the vast majority of research efforts have been dedicated to the development of solution‐based scalable processes. Comparatively, the vacuum thermal evaporation processes have not been studied in‐depth, regardless of their advantages in reproducibility, scalability, extendable applications, safety, and toxicity. Here possible opportunities and challenges are discussed in utilizing the vacuum thermal evaporation technique for mass production of large‐area perovskite solar modules. While this process has technical and economical potential, more research should be warranted.

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