Highly efficient green, red, and blue perovskite light‐emitting diode based metal‐oxide charge injection layers are demonstrated. This is an important step toward the realization of next‐generation solid‐state lighting and devices for use in full‐color large‐area display applications.
Here
we use triple-cation metal–organic halide perovskite
single crystals for the transistor channel of a flash memory device.
Moreover, we design and demonstrate a 10 nm thick single-layer nanofloating
gate. It consists of a ternary blend of two organic semiconductors,
a p-type polyfluorene and an n-type fullerene that form a donor:acceptor
interpenetrating network that serves as the charge storage unit, and
of an insulating polystyrene that acts as the tunneling dielectric.
Under such a framework, we realize the first non-volatile flash memory
transistor based on a perovskite channel. This simplified, solution-processed
perovskite flash memory displays unique performance metrics such as
a large memory window of 30 V, an on/off ratio of 9 × 107, short write/erase times of 50 ms, and a satisfactory retention
time exceeding 106 s. The realization of the first flash
memory transistor using a single-crystal perovskite channel could
be a valuable direction for perovskite electronics research.
We report the design and fabrication of an amorphous‐indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistor (TFT)‐based high‐speed and ultra‐narrow shift register on a plastic substrate. The shift register consisting 5 TFTs and 1 capacitor is small in physical size which is only 40 μm in width (pitch). At the supply voltage (VDD) of 15 V, the clock frequency of the shift register approaches 166.7 kHz, corresponding to a pulse width of 3 μs. The shift register could be operated under mechanical bending radius of 2mm, making it applicable to flexible high resolution active‐matrix displays.
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