High-Performance Flexible TFT Circuits Using TIPS Pentacene and Polymer Blend on Plastic

Choi, Min Hee; Kim, Byung Soon; Jang, Jin

doi:10.1109/led.2012.2213294

Cited by 27 publications

(14 citation statements)

References 12 publications

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“…Review PS, [166][167][168][169][171][172][173][174][175][176][177][178][179][180][181][182]213,214,299] poly(α-methylstyrene) (PαMS), [166][167][168][169][184][185][186][187][188][189][190][191][192] PMMA, [167,168,[193][194][195][196][197][198][199]260,300] poly(ε-caprolactone), [227] poly(vinyl cinnamate), [226] poly(α-vinyl naphthalene), [213] polyacrylates, [225] polycarbonate, [224] and PTAA and its derivatives. [186,…”

Section: Wileyonlinelibrarycommentioning

confidence: 99%

Effective Use of Electrically Insulating Units in Organic Semiconductor Thin Films for High‐Performance Organic Transistors

Kang

Qiu

et al. 2016

Adv Elect Materials

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The electrical properties of organic semiconductors (OSCs), whether they are conjugated small molecules or polymers, can be tailored by incorporating electrically insulating units (EIUs), which are organic moieties consisting of nonconjugated units. EIUs can be introduced to a thin film by synthetically connecting them to the otherwise conjugated OSC molecules or by blending them in as separate EIU molecules with the OSCs during the thin‐film fabrication process. The engineered EIUs are capable of imparting various additional functions to the OSC thin film and improving their electrical properties. In this review article, a comprehensive overview of various effects of EIUs on OSC thin films and their consequent electrical performance when used as active layers in organic field‐effect transistors (OFETs) is provided. A broad range of studies of the synthetic approaches of incorporating EIUs, such as those using side chains, block copolymers, and conjugation‐break spacers, and of the blending approaches with organic insulators is discussed. Finally, a brief summary and perspectives for future research in this field are presented.

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Section: Wileyonlinelibrarycommentioning

confidence: 99%

Effective Use of Electrically Insulating Units in Organic Semiconductor Thin Films for High‐Performance Organic Transistors

Kang

Qiu

et al. 2016

Adv Elect Materials

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“…Anthony et al reported 6,13‐bis(triisopropylsilylethynyl)pentacene (TIPS‐pentacene) substituted at the C6 and C13 positions with silicon alkynyl, resulting in much improved solubility in aromatic solvents . As TIPS‐pentacene has also shown promising electrical performance and environmental stability, for the last two decades, studies on the optimizations of film formation, high‐k dielectric, contact engineering, and device structure have been extensively reported to realize high‐performance printed OTFTs . Additionally, aligned crystalline domains of TIPS‐pentacene have been extensively investigated to achieve high‐mobility by spatially confining the channel area.…”

Section: Fundamental Description Of Inkjet Printing and Electronic Mamentioning

confidence: 99%

Recent Progress in Inkjet‐Printed Thin‐Film Transistors

2019

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Drop‐on‐demand inkjet printing is one of the most attractive techniques from a manufacturing perspective due to the possibility of fabrication from a digital layout at ambient conditions, thus leading to great opportunities for the realization of low‐cost and flexible thin‐film devices. Over the past decades, a variety of inkjet‐printed applications including thin‐film transistors (TFTs), radio‐frequency identification devices, sensors, and displays have been explored. In particular, many research groups have made great efforts to realize high‐performance TFTs, for application as potential driving components of ubiquitous wearable electronics. Although there are still challenges to enable the commercialization of printed TFTs beyond laboratory‐scale applications, the field of printed TFTs still attracts significant attention, with remarkable developments in soluble materials and printing methodology. Here, recent progress in printing‐based TFTs is presented from materials to applications. Significant efforts to improve the electrical performance and device‐yield of printed TFTs to match those of counterparts fabricated using conventional deposition or photolithography methods are highlighted. Moreover, emerging low‐dimension printable semiconductors, including carbon nanotubes and transition metal dichalcogenides as well as mature semiconductors, and new‐concept printed switching devices, are also discussed.

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“…At the same time, flexible display technology will be an important direction of display technology development now and in the future, but due to the hardness of large scale glass substrate which can't meet the requirements of flexible display substrate, the demand for flexible substrate technology were put forward. Plastic, metal film, ultra-thin glass, polyimide (PI) and other materials were used in flexible display research at present, and which can create a thinner, flexible display compared to traditional substrate technology [4][5][6]. At the same time, in order to develop the flexible display technology, traditional AMOLED display technology equipment and process technology were hoped used directly based on the traditional glass substrate fabrication process, except for low temperature process subject to special restrictions on flexible materials.…”

Section: Introductionmentioning

confidence: 99%

Influence of Plasma Treatment to the Performance of Amorphous IGZO based Flexible Thin Film Transistors

Chen¹,

X²,

Shi³

et al. 2017

Preprint

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Thin film transistors (TFTs) using In-Ga-Zn Oxide (IGZO) as active layer and the gate insulator was treated with NH3 plasma and N2O plasma, respectively, which is fabricated on flexible PI substrate in this work. The performance of IGZO TFTs with different plasma species and treatment time are investigated and compared. The experiment results show that the plasma species and treatment time play an important role in the threshold voltage, field-effect mobility, Ion/Ioff ratio, sub-threshold swing (SS) and bias stress stability of the devices. The TFT with a 10 seconds NH3 plasma treatment shows the best performance; specifically, threshold voltage of 0.34 V, field-effect mobility of 15.97 cm 2 /Vs, Ion/Ioff ratio of 6.33×10 7 , and sub-threshold swing of 0.36 V/dec. The proposed flexible IGZO-TFTs in this paper can be used as driving devices in the next-generation flexible displays.

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High-Performance Flexible TFT Circuits Using TIPS Pentacene and Polymer Blend on Plastic

Cited by 27 publications

References 12 publications

Effective Use of Electrically Insulating Units in Organic Semiconductor Thin Films for High‐Performance Organic Transistors

Effective Use of Electrically Insulating Units in Organic Semiconductor Thin Films for High‐Performance Organic Transistors

Recent Progress in Inkjet‐Printed Thin‐Film Transistors

Influence of Plasma Treatment to the Performance of Amorphous IGZO based Flexible Thin Film Transistors

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