Algorithms for mobile robotic systems are generally implemented on purely digital computing platforms. Developing alternative computational platforms may lead to more energy-efficient and responsive mobile robotics. Here, we report a hybrid analog-digital computing platform enabled by memristors on a mobile inverted pendulum robot. Our mobile robotic system can tune the conductance states of memristors adaptively using a model-free optimization method to achieve optimal control performance. We implement sensor fusion and the motion control algorithms on our hybrid analog-digital computing platform and demonstrate more than one order of magnitude enhancement of speed and energy efficiency over traditional digital platforms.

Artificial neuronal devices that functionally resemble biological neurons are important toward realizing advanced brain emulation and for building bioinspired electronic systems. In this Communication, the stochastic behaviors of a neuronal oscillator based on the charge-density-wave (CDW) phase transition of a 1T-TaS2 thin film are reported, and the capability of this neuronal oscillator to generate spike trains with statistical features closely matching those of biological neurons is demonstrated. The stochastic behaviors of the neuronal device result from the melt-quench-induced reconfiguration of CDW domains during each oscillation cycle. Owing to the stochasticity, numerous key features of the Hodgkin-Huxley description of neurons can be realized in this compact two-terminal neuronal oscillator. A statistical analysis of the spike train generated by the artificial neuron indicates that it resembles the neurons in the superior olivary complex of a mammalian nervous system, in terms of its interspike interval distribution, the time-correlation of spiking behavior, and its response to acoustic stimuli.

Memristive devices are promising candidates for analog computing applications such as neuromorphic computation. Larger dynamic ranges and more sufficient multilevel states can enable the significant development of memristor‐based utilizations. Herein, a method to improve the analog switching performance of memristors through a hybrid tuning (coarse and fine tuning) of two sub‐filaments is demonstrated. The creation of sub‐filaments inside the dielectric switching layer is realized by deploying Pt metal islands in the switching layer. Given the different material stack configurations of the two sub‐filaments, they exhibit different switching properties to play the roles of coarse and fine tuning respectively in the memristor. Based on the above mechanism, a Pt/Ta/Al2O3/Pt island/Al2O3‐x/TiOy/Al2O3‐x/Pt memristor is proposed and fabricated. Through the hybrid tuning of two sub‐filaments, a combined dynamic range of 600 Ω to 50 kΩ is achieved. Compared to the reference Pt/Ta/Al2O3/Pt memristors (dynamic range: 600 Ω to 8 kΩ), both dynamic range and multilevel resistance states are increased significantly. Meanwhile, the energy efficiency is improved because the resistance of tunable states can be set to larger values. Furthermore, this mechanism can be incorporated into various existing memristors to improve their dynamic range and multilevel states, which extensively enriches the applications of memristors.

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