Self‐trapped excitons (STEs) have recently attracted tremendous interest due to their broadband emission, high photoluminescence quantum yield, and self‐absorption‐free properties, which enable a large range of optoelectronic applications such as lighting, displays, radiation detection, and special sensors. Unlike free excitons, the formation of STEs requires strong coupling between excited state excitons and the soft lattice in low electronic dimensional materials. The chemical and structural diversity of metal halides provides an ideal platform for developing efficient STE emission materials. Herein, an overview of recent progress on STE emission materials for optoelectronic applications is presented. The relationships between the fundamental emission mechanisms, chemical compositions, and device performances are systematically reviewed. On this basis, currently existing challenges and possible development opportunities in this field are presented.

Gap plasmonic nanostructures are of great interest due to their ability to concentrate light into small volumes. Theoretical studies, considering quantum mechanical effects, have predicted the optimal spatial gap between adjacent nanoparticles to be in the subnanometer regime in order to achieve the strongest possible field enhancement. Here, we present a technology to fabricate gap plasmonic structures with subnanometer resolution, high reliability, and high throughput using collapsible nanofingers. This approach enables us to systematically investigate the effects of gap size and tunneling barrier height. The experimental results are consistent with previous findings as well as with a straightforward theoretical model that is presented here.

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