Dilute magnetic semiconductors (DMS), achieved through substitutional doping of spin-polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel magneto-electric or magneto-optical devices, especially for two-dimensional (2D) systems such as transition metal dichalcogenides that accentuate interactions and activate valley degrees of freedom. Practical applications of 2D magnetism will likely require room-temperature operation, air stability, and (for magnetic semiconductors) the ability to achieve optimal doping levels without dopant aggregation. Here, room-temperature ferromagnetic order obtained in semiconducting vanadium-doped tungsten disulfide monolayers produced by a reliable single-step film sulfidation method across an exceptionally wide range of vanadium concentrations, up to 12 at% with minimal dopant aggregation, is described. These monolayers develop p-type transport as a function of vanadium incorporation and rapidly reach ambipolarity. Ferromagnetism peaks at an intermediate vanadium concentration of˜2 at% and decreases for higher concentrations, which is consistent with quenching due to orbital hybridization at closer vanadium-vanadium spacings, as supported by transmission electron microscopy, magnetometry, and first-principles calculations. Room-temperature 2D-DMS provide a new component to expand the functional scope of van der Waals heterostructures and bring semiconducting magnetic 2D heterostructures into the realm of practical application.
The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe2) and a topological semimetal (ZrTe2). We find that one unit-cell (u.c.) thick 1T-CrTe2 grown epitaxially on ZrTe2 is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe2), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe2 (3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device.
Beyond the intrinsic properties of 2D materials, another advantage is the tunability that follows from their low dimensionality. Here, large‐area Nb‐doped MoS2 monolayer films deposited by metal organic chemical vapor deposition that can function as electrical contacts or chemical sensors are demonstrated. Compared to pristine MoS2, Nb‐doped MoS2 exhibits a relatively faster growth rate and quenched PL due to formation of mid‐gap energy bands. When the Nb concentration reaches 5 at%, doped MoS2 shows clear p‐type characteristics, evident by a 1.7 eV shift of the Fermi level toward the valence band maximum. Doping also impacts transport at the metal/MoS2 interface, demonstrated by Pt–Ir metallization that is Schottky‐limited when in contact with undoped MoS2 but Ohmic on Nb‐MoS2. Moreover, a 50 × improved signal‐to‐noise ratio is demonstrated in sensing triethylamine compared to undoped MoS2, with <15 parts‐per‐billion detection limit.
This research examined the role of psychological availability as a means of psychological engagement between self-initiated expatriates (SIEs) and their host-country nationals (HCNs) colleagues during their work and interaction adjustment. To reveal this process, this study presented the concept of psychological availability, which refers to an individual’s belief that they are physically, cognitively, and emotionally ready or confident to engage the self with their colleagues, as a mediator between proactive personality and adjustment. Also, it investigated the relationship between proactive personality and psychological availability and how it was moderated by supportive supervisor relations. We hypothesized, this relationship would be weakened/strengthened when SIEs and HCNs received low/high level of support from their supervisor. This study was conducted as a quantitative study, data was used from 342 SIEs and 342 HCNs working in mainland China. Our finding supported the hypothesis that psychological availability mediated the relationship between proactive personality and their adjustment to an international work environment; in addition, the relationship between proactive personality and psychological availability would be stronger when the level of superiors relations support is high between SIEs and HCNs. This study demonstrated the value of proactive personality as an antecedent effect and supportive supervisor relations as a moderating effect, and investigated how these factors can lead to a sense of psychological availability and boost psychological engagement between SIEs and HCNs in order to improve the adjustment between them.
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