Topological spintronics aims to exploit the spin-momentum locking in the helical surface states of topological insulators for spin-orbit torque devices. We address a fundamental question that still remains unresolved in this context: does the topological surface state alone produce the largest values of spin-charge conversion efficiency or can the strongly spin-orbit coupled bulk states also contribute significantly? By studying the Fermi level dependence of spin pumping in topological insulator/ferrimagnetic insulator bilayers, we show that the spin Hall conductivity is constant when the Fermi level is tuned across the bulk band gap, consistent with a full bulk band calculation. The results suggest a new perspective, wherein "bulk-surface correspondence" allows spin-charge conversion to be simultaneously viewed either as coming from the full bulk band, or from spinmomentum locking of the surface state. :1906.11116v1 [cond-mat.mtrl-sci] arXiv

The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe2) and a topological semimetal (ZrTe2). We find that one unit-cell (u.c.) thick 1T-CrTe2 grown epitaxially on ZrTe2 is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe2), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe2 (3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device.

We use spin torque ferromagnetic resonance and ferromagnetic-resonance-driven spin pumping to detect spin-charge interconversion at room temperature in heterostructure devices that interface an archetypal Dirac semimetal, Cd 3 As 2 , with a metallic ferromagnet, Ni 0.80 Fe 0.20 (permalloy).Angle-resolved photoemission directly reveals the Dirac semimetal nature of the samples prior to device fabrication and high-resolution transmission electron microscopy is used to characterize the crystalline structure and the relevant heterointerfaces. We find that the spin-charge interconversion efficiency in Cd 3 As 2 /permalloy heterostructures is comparable to that in heavy metals and that it is enhanced by the presence of an interfacial oxide. Spin torque ferromagnetic resonance measurements reveal an in-plane spin polarization regardless of an oxidized or pristine interface.We discuss the underlying mechanisms for spin-charge interconversion by comparing our results with first principles calculations and conclude that extrinsic mechanisms dominate the observed phenomena. Our results indicate a need for caution in interpretations of spin transport and spincharge conversion experiments in Cd 3 As 2 devices that seek to invoke the role of topological Dirac and Fermi arc states.

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