While soliton microcombs offer the potential for integration of powerful frequency metrology and precision spectroscopy systems, their operation requires complex startup and feedback protocols that necessitate difficult-to-integrate optical and electrical components. Moreover, CMOS-rate microcombs, required in nearly all comb systems, have resisted integration because of their power requirements. Here, a regime for turnkey operation of soliton microcombs co-integrated with a pump laser is demonstrated and theoretically explained. Significantly, a new operating point is shown to appear from which solitons are generated through binary turn-on and turn-off of the pump laser, thereby eliminating all photonic/electronic control circuitry. These features are combined with high-Q Si3N4 resonators to fully integrate into a butterfly package microcombs with CMOS frequencies as low as 15 GHz, offering compelling advantages for high-volume production.

Laboratory optical atomic clocks achieve remarkable accuracy (now counted to 18 digits or more), opening possibilities to explore fundamental physics and enable new measurements. However, their size and use of bulk components prevent them from being more widely adopted in applications that require precision timing. By leveraging silicon-chip photonics for integration and to reduce component size and complexity, we demonstrate a compact optical-clock architecture. Here a semiconductor laser is stabilized to an optical transition in a microfabricated rubidium vapor cell, and a pair of interlocked Kerr-microresonator frequency combs provide fully coherent optical division of the clock laser to generate an electronic 22 GHz clock signal with a fractional frequency instability of one part in 10 13 . These results demonstrate key concepts of how to use silicon-chip devices in future portable and ultraprecise optical clocks. Main Text:Optical atomic clocks, which rely on high-frequency, narrow-linewidth optical transitions to stabilize a clock laser, outperform their microwave counterparts by several orders of magnitude due to their inherently large quality factors (1). Optical clocks based on laser-cooled and latticetrapped atoms have demonstrated fractional instabilities at the 10 -18 level (2), setting stringent new limits on tests of fundamental physics (3, 4) and may eventually replace microwave clocks in global timekeeping, navigation and the definition of the SI second (5). Despite their excellent performance, optical clocks are almost exclusively operated by metrological institutions and universities due to their large size and complexity.Although significant progress has been made in reducing the size of laser-cooled atomic clocks to fit inside a mobile trailer (6), applications of these clocks are still limited to metrological clock comparisons and precision geodesy (7). In contrast, optical oscillators referenced to thermal atomic or molecular vapors can be realized in small form factors and still reach instabilities below 10 -14 (8,9). A fully integrated optical clock would benefit many of the applications (10) that currently utilize compact or chip-scale (11) microwave atomic clocks but, until recently, techniques for on-chip laser stabilization to atoms (12) and optical frequency division (13) were not available. Here, we propose and demonstrate an architecture for an integrated optical clock, based on an atomic vapor cell implemented on a silicon chip and a

Driven by narrow-linewidth bench-top lasers, coherent optical systems spanning optical communications, metrology and sensing provide unrivalled performance. To transfer these capabilities from the laboratory to the real world, a key missing ingredient is a mass-produced integrated laser with superior coherence. Here, we bridge conventional semiconductor lasers and coherent optical systems using CMOS-foundry-fabricated microresonators with record high Q factor over 260 million and finesse over 42,000. Five orders-of-magnitude noise reduction in the pump laser is demonstrated, and for the first time, fundamental noise below 1 Hz 2 Hz −1 is achieved in an electrically-pumped integrated laser. Moreover, the same configuration is shown to relieve dispersion requirements for microcomb generation that have handicapped certain nonlinear platforms. The simultaneous realization of record-high Q factor, highly coherent lasers and frequency combs using foundry-based technologies paves the way for volume manufacturing of a wide range of coherent optical systems.

For its many useful properties, including second and third-order optical nonlinearity as well as electro-optic control, lithium niobate is considered an important potential microcomb material. Here, a soliton microcomb is demonstrated in a monolithic high-Q lithium niobate resonator. Besides the demonstration of soltion mode locking, the photorefractive effect enables mode locking to self-start and soliton switching to occur bi-directionally. Second-harmonic generation of the soliton spectrum is also observed, an essential step for comb self-referencing. The Raman shock time constant of lithium niobate is also determined by measurement of soliton self-frequency-shift. Besides the considerable technical simplification provided by a self-starting soliton system, these demonstrations, together with the electro-optic and piezoelectric properties of lithium niobate, open the door to a multi-functional microcomb providing f-2f generation and fast electrical control of optical frequency and repetition rate, all of which are critical in applications including time keeping, frequency synthesis/division, spectroscopy and signal generation. arXiv:1812.09610v1 [physics.optics]Abstract In this supplement detailed information is provided on the following: the device design, the experimental setup, the numeric modeling of soliton comb generation with analysis of self-starting mode locking, and the characterization of key device parameters. * These two authors contributed equally. † Electronic

Optical microcavities are essential in numerous technologies and scientific disciplines. However, their application in many areas relies exclusively upon discrete microcavities in order to satisfy challenging combinations of ultra-low-loss performance (high cavity-Q-factor) and cavity design requirements. Indeed, finding a microfabrication bridge connecting ultra-high-Q device functions with micro and nanophotonic circuits has been a long-term priority of the microcavity field. Here, an integrated ridge resonator having a record Q factor over 200 million is presented. Its ultralow-loss and flexible cavity design brings performance that has been the exclusive domain of discrete silica and crytalline microcavity devices to integrated systems. Two distinctly different devices are demonstrated: soliton sources with electronic repetition rates and high-coherence Brillouin lasers. This multi-device capability and performance from a single integrated cavity platform represents a critical advance for future nanophotonic circuits and systems.Optical microcavities 1 provide diverse device functions that include frequency microcombs 2,3 , soliton modelocked microcombs 4-8 , Brillouin lasers 9-13 , bio and nanoparticle sensors 14-16 , cavity optomechanical oscillators 17 , parametric oscillators 18,19 , Raman lasers 20 , reference cavities/sources 21-24 , and quantum optical devices 25,26 . Key performance metrics improve with increasing Qfactor across all applications areas 1 . For example, higher Q factors dramatically reduce power consumption as well as phase and intensity noise in signal sources, because these quantities scale inverse quadratically with Q factor. Also, higher Q improves the ability to resolve a resonance for sensing or for frequency stabilization. Such favorable scalings of performance with Q factor have accounted for a sustained period of progress in boosting Q factor by reducing optical loss in resonators across a range of materials 27-31 . Likewise, the need for complex microcavity systems that leverage high-Q factors has driven interest in low-loss monolithically integrated resonators 28,29,[32][33][34][35][36][37][38] . For example, Q values in waveguide-integrated devices to values as high as 80 million 35 and 67 million 38 in strongly-confined resonators have been attained.Nonetheless, the highest Q-factor resonators remain discrete devices that are crystalline 39 or silica based 1,11,40,41 . These discrete resonators are moreover unique in the microcavity world in terms of overall per-formance and breadth of capability. This includes generation of electronic-repetition-rate soliton streams as required in optical clocks 42-44 and optical synthesizers 45 , rotation measurement at near-earth-rate sensitivity in micro-optical-gyros 46,47 , synthesis of high-performance microwave signals 48-51 , and operation as high-stability optical frequency references 21-23 and reference sources 24 . Functions such as these belong to a new class of compact photonic systems that rely upon ultra-high-Q fabrication m...

†All three authors contributed equally to this work pg. 2 Recent advances in nonlinear optics have revolutionized the area of integrated photonics, providing on-chip solutions to a wide range of new applications. Currently, the state of the art integrated nonlinear photonic devices are mainly based on dielectric material platforms, such as Si3N4 and SiO2. While semiconductor materials hold much higher nonlinear coefficients and convenience in active integration, they suffered in the past from high waveguide losses that prevented the realization of highly efficient nonlinear processes on-chip. Here we challenge this status quo and demonstrate an ultra-low loss AlGaAs-on-insulator (AlGaAsOI) platform with anomalous dispersion and quality (Q) factors beyond 1.5 × 10 6 . Such a high quality factor, combined with the high nonlinear coefficient and the small mode volume, enabled us to demonstrate a record low Kerr frequency comb generation threshold of ~36 µW for a resonator with a 1 THz free spectral range (FSR), ~100 times lower compared to that in previous semiconductor platform. Combs with >250 nm broad span have been generated under a pump power lower than the threshold power of state of the art dielectric micro combs. A soliton-step transition has also been observed for the first time from an AlGaAs resonator. This work is an important step towards ultra-efficient semiconductor-based nonlinear photonics and will lead to fully integrated nonlinear photonic integrated circuits (PICs) in near future. pg. 3 The extensive research on integrated nonlinear photonics in the last few years, driven by the breakthrough of the microcomb and other on-chip nonlinear devices, has opened up many new opportunities for on-chip integrated photonics, ranging from spectroscopy to atomic clock applications [1-3]. The demand to construct efficient nonlinear devices has motivated the development of different material platforms in nonlinear photonics. A common endeavor of those efforts is the reduction of the waveguide propagation loss, which is essential to enable high Q cavities so as to enhance the build-up power in the resonators and therefore increase the efficiency of the nonlinear optical processes [4]. In this regard, silica on silicon resonators [5-7] have long been dominant offering Q factors as high as 1 billion [6]. These devices can access a wide range of nonlinear effects including microwave rate soliton microcombs [8].However, over the last 5 years, there has been remarkable progress to significantly improve the Q factors of resonators in many other nonlinear integrated optical material platforms. One example is the Si3N4 platform, which delivers high performance in Kerr comb generation on chip [9][10][11]. The Si3N4 micro-resonators have enabled the generation of efficient frequency combs with repetition rates from microwave to THz frequencies [12] and improved Q factor of beyond 30 million [13,14]. Another material, which recently attracted attention, is LiNbO3. It offers additional opportunities for integrated nonlinear...

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Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN photonic integrated circuits (PICs), but are difficult to fully integrate with low-index SiN waveguides due to their large mismatch with the high-index III-V gain materials. The recent demonstration of multilayer heterogeneous integration provides a practical solution and enabled the first-generation of lasers fully integrated with SiN waveguides. However, a laser with high device yield and high output power at telecommunication wavelengths, where photonics applications are clustered, is still missing, hindered by large mode transition loss, non-optimized cavity design, and a complicated fabrication process. Here, we report high-performance lasers on SiN with tens of milliwatts output power through the SiN waveguide and sub-kHz fundamental linewidth, addressing all the aforementioned issues. We also show Hertz-level fundamental linewidth lasers are achievable with the developed integration techniques. These lasers, together with high-Q SiN resonators, mark a milestone towards a fully integrated low-noise silicon nitride photonics platform. This laser should find potential applications in LIDAR, microwave photonics and coherent optical communications.