For its many useful properties, including second and third-order optical nonlinearity as well as electro-optic control, lithium niobate is considered an important potential microcomb material. Here, a soliton microcomb is demonstrated in a monolithic high-Q lithium niobate resonator. Besides the demonstration of soltion mode locking, the photorefractive effect enables mode locking to self-start and soliton switching to occur bi-directionally. Second-harmonic generation of the soliton spectrum is also observed, an essential step for comb self-referencing. The Raman shock time constant of lithium niobate is also determined by measurement of soliton self-frequency-shift. Besides the considerable technical simplification provided by a self-starting soliton system, these demonstrations, together with the electro-optic and piezoelectric properties of lithium niobate, open the door to a multi-functional microcomb providing f-2f generation and fast electrical control of optical frequency and repetition rate, all of which are critical in applications including time keeping, frequency synthesis/division, spectroscopy and signal generation. arXiv:1812.09610v1 [physics.optics]Abstract In this supplement detailed information is provided on the following: the device design, the experimental setup, the numeric modeling of soliton comb generation with analysis of self-starting mode locking, and the characterization of key device parameters. * These two authors contributed equally. † Electronic

Modern advanced photonic integrated circuits require dense integration of high-speed electro-optic functional elements on a compact chip that consumes only moderate power. Energy efficiency, operation speed, and device dimension are thus crucial metrics underlying almost all current developments of photonic signal processing units. Recently, thin-film lithium niobate (LN) emerges as a promising platform for photonic integrated circuits. Here, we make an important step towards miniaturizing functional components on this platform, reporting high-speed LN electro-optic modulators, based upon photonic crystal nanobeam resonators. The devices exhibit a significant tuning efficiency up to 1.98 GHz V −1 , a broad modulation bandwidth of 17.5 GHz, while with a tiny electro-optic modal volume of only 0.58 μm 3. The modulators enable efficient electro-optic driving of high-Q photonic cavity modes in both adiabatic and non-adiabatic regimes, and allow us to achieve electro-optic switching at 11 Gb s −1 with a bit-switching energy as low as 22 fJ. The demonstration of energy efficient and high-speed electro-optic modulation at the wavelength scale paves a crucial foundation for realizing large-scale LN photonic integrated circuits that are of immense importance for broad applications in data communication, microwave photonics, and quantum photonics.

The lithium niobate integrated photonic platform has recently shown great promise in nonlinear optics on a chip scale. Here, we report second-harmonic generation in a high-Q lithium niobate microring resonator through modal phase matching, with a conversion efficiency of 1,500% W −1 . Our device also allows us to observe difference-frequency generation in the telecom band. Our work demonstrates the great potential of the lithium niobate integrated platform for nonlinear wavelength conversion with high efficiencies.

High-fidelity periodic poling over long lengths is required for robust, quasi-phase-matched second-harmonic generation using the fundamental, quasi-TE polarized waveguide modes in a thin-film lithium niobate (TFLN) waveguide. Here, a shallow-etched ridge waveguide is fabricated in x-cut magnesium oxide doped TFLN and is poled accurately over 5 mm. The high fidelity of the poling is demonstrated over long lengths using a non-destructive technique of confocal scanning second-harmonic microscopy. We report a second-harmonic conversion efficiency of up to 939 %.W−1 (length-normalized conversion efficiency 3757 %.W−1.cm−2), measured at telecommunications wavelengths. The device demonstrates a narrow spectral linewidth (1 nm) and can be tuned precisely with a tuning characteristic of 0.1 nm/°C, over at least 40 °C without measurable loss of efficiency.

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