Articles you may be interested inMagnetic tunnel junction based out-of-plane field sensor with perpendicular magnetic anisotropy in reference layer
The DAMA/LIBRA collaboration has reported the observation of an annual modulation in the event rate that has been attributed to dark matter interactions over the last two decades. However, even though tremendous efforts to detect similar dark matter interactions were pursued, no definitive evidence has been observed to corroborate the DAMA/LIBRA signal. Many studies assuming various dark matter models have attempted to reconcile DAMA/LIBRA’s modulation signals and null results from other experiments, however no clear conclusion can be drawn. Apart from the dark matter hypothesis, several studies have examined the possibility that the modulation is induced by variations in detector’s environment or their specific analysis methods. In particular, a recent study presents a possible cause of the annual modulation from an analysis method adopted by the DAMA/LIBRA experiment in which the observed annual modulation could be reproduced by a slowly varying time-dependent background. Here, we study the COSINE-100 data using an analysis method similar to the one adopted by the DAMA/LIBRA experiment and observe a significant annual modulation, however the modulation phase is almost opposite to that of the DAMA/LIBRA data. Assuming the same background composition for COSINE-100 and DAMA/LIBRA, simulated experiments for the DAMA/LIBRA without dark matter signals also provide significant annual modulation with an amplitude similar to DAMA/LIBRA with opposite phase. Even though this observation does not directly explain the DAMA/LIBRA results directly, this interesting phenomenon motivates more profound studies of the time-dependent DAMA/LIBRA background data.
193nm lithography is a promising candidate for the fabrication of microelectronic devices at the l3Onm design rule and below. With smaller feature sizes, below l3Onm, reduced resist thickness is essential because of the pattern collapse issues at high aspect ratios and the limited depth of focus with 193nm lithography tools. However, ArF resists have shown problems with etch selectivity, especially with the thin resist layers necessary. Additionally, pattern slimming during CD-SEM measurement, due to the nature of the resist chemistry, is an issue with feature stability after patterning.At present, many studies have been performed for improving the etch selectivity of resists and addressing line slimming issues. In this study, the electron beam stabilization process has been applied for improving the etch selectivity of resist patterns having an aspect ratio less than 3.0. The electron beam stabilization has been applied to two different ArF resist types; acrylate and cyclic-olefin-maleicanhydride (COMA), which have been evaluated with respect to materials properties, etch selectivity, and line slimming performance as a function of electron beam dose and etch condition.Film shrinkage and the change in index of refraction were monitored as a function of stabilization condition. The chemical properties were characterized before and after electron beam stabilization using FTIR analysis. Blanket resist etch rate studies were performed as a function of stabilization condition for each resist type. Cross-sectional views of resist patterns after etch processing were also investigated to evaluate the improvement in etch resistance provided by the electron beam process. CD SEM measurements were performed to evaluate the impact of the stabilization process on the patterned features. The issue of line slimming has also been evaluated, with and without electron beam stabilization, for the different ArF resist materials considered. The results were compared with a KrF resist currently used in production. Based on the experimental results, the electron beam process provides a method for improving etch selectivity and reducing line slimming issues of ArF resists.
We estimated the process margins of various cell structures and process problems for full chip process under extreme resolution limit of exposure tool. Therefore, optimizing off axis illumination (OAI) condition for various structures obtained the fme pattern and wider process margin using simulation and experiment. From our experiment, we should use as higher numerical aperture (NA), smaller R and smaller r as possible to reduce critical dimension (CD) difference between dense and isolated patterns. Process margins are obtained more than 8% exposure latitude (EL) and 0.5 tin depth of focus (DOF) for each cell. However, we can consider using of attenuated phase shift mask (PSM) to improve the exposure and DOF margin. We fmd that real full chip process induces the critical problems such as isolated line (I/L) and space (L'S) pattern variation due to lens aberration, partial coherence effect, mask error effect, and optical proximity effect. These effects play a role to determine the design rule of cell and periphery structures. In spite of good lens quality, variation of I/L and US pattern for various exposure conditions is almost 4Onm or more compared to line and space (L/S) pattern. These phenomena are becoming the critical issue to fulfill the full chip process of l3Onm lithography. By optimizing mask error effect, isolated and dense pattern bias (ID bias), and OAI, we can achieve l3Onm technology with 248nm KrF lithography.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.