In this study, three-dimensional simulations of the ultrasonic vibration bonding process of micro-copper blocks were conducted using the finite element method. We analyzed the effects of ultrasonic vibration frequency on the stress field, strain field, and temperature field at the copper bump joint surface. The results showed that the bonding process is successfully simulated at room temperature. The stress curve of the bonding process could be divided into three stages: stress rising stage, stress falling stage, and stress stabilization stage. Moreover, it was found that the end of the curve exhibited characteristics of a solid solution phase at higher frequencies. It is hypothesized that the high-density dislocations formed at this stage may result in conveyance channels that facilitate the atomic diffusion at the contact surface. The simulation results indicated that copper micro-bump bonding occurs at an ultrasonic frequency of 50 kHz or higher.
In this study, the nanoindentation responses of Bi2Se3 thin film were quantitatively analyzed and simulated by using the finite element method (FEM). The hardness and Young’s modulus of Bi2Se3 thin films were experimentally determined using the continuous contact stiffness measurements option built into a Berkovich nanoindenter. Concurrently, FEM was conducted to establish a model describing the contact mechanics at the film/substrate interface, which was then used to reproduce the nanoindentation load-depth and hardness-depth curves. As such, the appropriate material parameters were obtained by correlating the FEM results with the corresponding experimental load-displacement curves. Moreover, the detailed nanoindentation-induced stress distribution in the vicinity around the interface of Bi2Se3 thin film and c-plane sapphires was mapped by FEM simulation for three different indenters, namely, the Berkovich, spherical and flat punch indenters. The results indicated that the nanoindentation-induced stress distribution at the film/substrate interface is indeed strongly dependent on the indenter’s geometric shape.
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