One-dimensional piezoelectric nanomaterials have attracted great attention in recent years for their possible applications in mechanical energy scavenging devices. However, it is difficult to control the structural diameter, length, and density of these fibers fabricated by micro/nano-technologies. This work presents a hollow cylindrical near-field electrospinning (HCNFES) process to address production and performance issues encountered previously in either far-field electrospinning (FFES) or near-field electrospinning (NFES) processes. Oriented polyvinylidene fluoride (PVDF) fibers in the form of nonwoven fabric have been directly written on a glass tube for aligned piezoelectricity. Under a high in situ electrical poling field and strong mechanical stretching (the tangential speed on the glass tube collector is about 1989.3 mm s −1 ), the HCNFES process is able to uniformly deposit large arrays of PVDF fibers with good concentrations of piezoelectric β-phase. The nonwoven fiber fabric (NFF) is transferred onto a polyethylene terephthalate (PET) substrate and fixed at both ends using copper foil electrodes as a flexible textile-fiber-based PVDF energy harvester. Repeated stretching and releasing of PVDF NFF with a strain of 0.05% at 7 Hz produces a maximum peak voltage and current at 76 mV and 39 nA, respectively.
In this paper we present a silicon wafer bonding technique for 3D microstructures using MEMS process technology. Photo-definable material with patternable characteristics served as the bonding layer between the silicon wafers. A bonding process was developed and several types of photo-definable material were tested for bonding strength and pattern spatial resolution. The results indicated that SU-8 is the best material with a bonding strength of up to 213 kg cm−2 (20.6 MPa), and a spatial resolution of 10 μm, at a layer thickness of up to 100 μm. The low-temperature bonding technique that is presented is particularly suitable for microstructure and microelectronics integration involved in MEMS packaging.
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