In this report, the
dielectric nature of graphene oxide (GO) was
exploited for the successful implementation of low-power pentacene
thin-film transistors suitable for nonvolatile memory applications.
Two different types of devices were fabricated on indium tin oxide-coated
glass substrates with two different metals, viz., gold and aluminum,
as the source and drain contacts. The performance of the devices was
analyzed from their field-effect characteristics. Both the devices
showed dominant p-type charge transport behavior. The breakdown electric
field was determined to be 1.02 × 10
8
V/m. The current
transport mechanism was explained from the output characteristics
using the Fowler–Nordheim tunneling theory. Capacitance–voltage
(
C
–
V
) measurements have been
employed to determine the value of the oxide capacitance and to examine
the memory effect. The hysteresis behavior observed from the
C
–
V
characteristics show the suitability
of the device for memory applications with a low operating voltage
of 3 V. The charge trapping behavior of GO was explained by the energy
band diagram. Frequency-dependent
C
–
V
measurements in the range 100 kHz to 1 MHz were also performed
to account for the memory window obtained in the devices. The charge
retention and endurance characteristics were evaluated under a constant
voltage stress to check the reliability of device operation.
Nanoparticle-nanowire heterostructures provide a new platform for photodetection applications owing to their higher light absorption, large responsivity, and excellent separation efficiency of photogenerated electron-hole pairs. Herein, we report a SnS 2 /Si nanowire heterostructure photodetector with excellent optoelectronic properties. A high-quality SnS 2 /Si nanowire heterostructure was prepared by simply spin coating a wet chemically synthesized SnS 2 on a vertically standing Si nanowire made by metal assisted chemical etching. The as-prepared SnS 2 /Si nanowire heterostructure exhibits a robust p-n junction with excellent photodetector characteristics. The photodetector based on the heterostructure shows a photo-responsivity of ∼3.8 A W −1 , a specific detectivity up to ∼ 2 × 10 14 Jones, and an on/off ratio up to ∼ 10 2 at 340 nm illumination wavelength with a significantly low optical power density of 53.75 nW/mm 2 at zero bias (0 V). The photoresponsivity reached its maximum value of ∼10 2 A/W and detectivity of ∼1 × 10 14 Jones at the same wavelength with an applied bias of −2 V. In addition, the heterostructure photodetector provides significantly good photodetector key parameters (responsivity ∼5.3 A/W, detectivity ∼ 7.5 × 10 12 Jones, rise/decay time ∼0.4/0.4 s) at −2 V bias over a wide spectral range from 400 to 1100 nm. The Si nanowire and SnS 2 nanoparticle heterostructure devices with an enhanced junction area open up an exciting field for novel non-toxic and environmental friendly broadband optical detection applications and optoelectronic memory devices with high responsivity, ultrahigh sensitivity, and self-sufficient functionality at low power consumption and low cost with ease of processing.
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