Near-infrared detection in Si/InP core-shell radial heterojunction nanowire arrays

Pal, Biswajit; Sarkar, Kalyan Jyoti; Das, Sourav; Banerji, P.

doi:10.1016/j.jallcom.2021.160943

Cited by 9 publications

(6 citation statements)

References 61 publications

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“…The reported works introduced structural variation in Si NW arrays [ 15 ] or various materials to form heterostructures with Si NWs. [ 50–57 ] In this work, the length‐controlled Si NW array photodetector displays the considerable responsivity of 0.65 A W −1 at 1000 nm without introducing other materials on Si NW arrays. In addition, we passivate the Si NW arrays by using the SiO x layer on the Si NW sidewall, leading to the considerable responsivity at 1100 nm.…”

Section: Resultsmentioning

confidence: 98%

High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiO_x Surface Passivation

Son

Shin

Zhao

et al. 2023

Adv Materials Technologies

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Silicon (Si) nanowire (NW) array is a promising light‐trapping platform due to the strong interaction between light and nanostructure. A photodetector benefits from the improved optical absorption in the Si NW array. Although the optical absorption increases with the NW length, the large NW length is not always preferable owing to the large surface area. Here, the systematic study on the Si NW array photodetectors with varied NW lengths is investigated. It is revealed that the photodetectors with 1 µm length provide a highest responsivity of 0.65 A W−1 and a specific detectivity of 1.40 × 109 cm Hz1/2 W−1 at the wavelength of 1000 nm, including the dark current of 54 µA at 1 V. In addition, the silicon oxide (SiOx) surface passivation is introduced to induce the high photogain. As a result, the responsivity is improved by 13 times (0.55 A W−1) at 1100 nm. This work proposes high‐efficiency Si NW array photodetectors by the NW array length control and the SiOx surface passivation.

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Section: Resultsmentioning

confidence: 98%

High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiO_x Surface Passivation

Son

Shin

Zhao

et al. 2023

Adv Materials Technologies

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“…Figure 3 shows some typical UV-vis-IR optoelectronic materials and the band structures calculated by first-principles. [110][111][112][113][114][115][116][117][118][119][120][121][122][123][124] In this part, we will discuss the NWs based optoelectronic synaptic devices in different spectral range, and facilitate the future applications of NWs optoelectronic synapses.…”

Section: Uv-vis-ir Optoelectronic Synaptic Devicesmentioning

confidence: 99%

“…a) Some typical UV-vis-IR optoelectronic materials. [110][111][112][113][114][115][116][117][118][119] Band structures of b) GaN. Reproduced with permission.…”

Section: Uv Optoelectronic Synaptic Devicesmentioning

confidence: 99%

Nanowires for UV–vis–IR Optoelectronic Synaptic Devices

Chen

Jiang

et al. 2022

Adv Funct Materials

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Simulating biological synaptic functionalities through artificial synaptic devices opens up an innovative way to overcome the von Neumann bottleneck at the device level. Artificial optoelectronic synapses provide a non‐contact method to operate the devices and overcome the shortcomings of electrical synaptic devices. With the advantages of high photoelectric conversion efficiency, adjustable light absorption coefficient, and broad spectral range, nanowires (NWs)‐based optoelectronic synapses have attracted wide attention. Herein, to better promote the applications of nanowires‐based optoelectronic synapses for future neuromorphic systems, the functionalities of optoelectronic synaptic devices and the current progress of NWs optoelectronic synaptic devices in UV–vis–IR spectral range are introduced. Furthermore, a bridge between NWs‐based optoelectronic synaptic device and the neuromorphic system is established. Challenges for the forthcoming development of NWs optoelectronic synapses are also discussed. This review may offer a vision into the design and neuromorphic applications of NWs‐based optoelectronic synaptic devices.

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“…59,60 The p-type Si nanowire arrays (SiNWs) are the one-dimensional nanostructures of p-type Si, which has better properties than bulk Si, such as the photoelectric effect and other optical properties, high surface activity, high electron transport characteristics, high stability and so on. [61][62][63][64][65] SiNWs have been widely used in the luminescent material and other research elds. In recent years, SiNWs have been widely reported in the application for the photoelectrocatalytic reduction of CO 2.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of p-type silicon nanowire array based photoelectrodes for the efficient photoelectrocatalytic reduction of CO₂ to fuels and chemicals

Wei

Fan

et al. 2022

Sustainable Energy Fuels

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Near-infrared detection in Si/InP core-shell radial heterojunction nanowire arrays

Cited by 9 publications

References 61 publications

High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiO_x Surface Passivation

High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiO_x Surface Passivation

Nanowires for UV–vis–IR Optoelectronic Synaptic Devices

Fabrication of p-type silicon nanowire array based photoelectrodes for the efficient photoelectrocatalytic reduction of CO₂ to fuels and chemicals

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Near-infrared detection in Si/InP core-shell radial heterojunction nanowire arrays

Cited by 9 publications

References 61 publications

High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiOx Surface Passivation

High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiOx Surface Passivation

Nanowires for UV–vis–IR Optoelectronic Synaptic Devices

Fabrication of p-type silicon nanowire array based photoelectrodes for the efficient photoelectrocatalytic reduction of CO2 to fuels and chemicals

Contact Info

Product

Resources

About

High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiO_x Surface Passivation

High‐Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiO_x Surface Passivation

Fabrication of p-type silicon nanowire array based photoelectrodes for the efficient photoelectrocatalytic reduction of CO₂ to fuels and chemicals