Nanowires for UV–vis–IR Optoelectronic Synaptic Devices

Abstract

Simulating biological synaptic functionalities through artificial synaptic devices opens up an innovative way to overcome the von Neumann bottleneck at the device level. Artificial optoelectronic synapses provide a non‐contact method to operate the devices and overcome the shortcomings of electrical synaptic devices. With the advantages of high photoelectric conversion efficiency, adjustable light absorption coefficient, and broad spectral range, nanowires (NWs)‐based optoelectronic synapses have attracted wide attention. Herein, to better promote the applications of nanowires‐based optoelectronic synapses for future neuromorphic systems, the functionalities of optoelectronic synaptic devices and the current progress of NWs optoelectronic synaptic devices in UV–vis–IR spectral range are introduced. Furthermore, a bridge between NWs‐based optoelectronic synaptic device and the neuromorphic system is established. Challenges for the forthcoming development of NWs optoelectronic synapses are also discussed. This review may offer a vision into the design and neuromorphic applications of NWs‐based optoelectronic synaptic devices.

Molecular template growth of organic heterojunctions to tailor visual neuroplasticity for high performance phototransistors with ultralow energy consumption

“…In the nervous system, a stronger stimulus of an event, provoking LTP, strengthens the connection between pre-synaptic and post-synaptic neurons, consolidating long-lasting permanent memory retention in the human brain. 34,35 Accordingly, the transition from STP to LTP in visual neuroplasticity can be provoked by altering the light stimulation parameters such as the number of pulses, pulse intensity, and pulse width. 36,37 One common form of LTP is the spike-number-dependent synaptic plasticity (SNDP), which is stimulated by applying light pulses ranging from 1 to 100 pulses (450 nm; 21.2 mW cm À2 ; 50 ms) to the device, consolidating the transition and prolonging the longterm memory functionality, as illustrated in Fig.…”

Inorganic Perovskite Quantum Dot-Mediated Photonic Multimodal Synapse

“…High power consumption and large-area fabrication are important issues associated with transistor-based neuromorphic synaptic devices. Materials such as carbon at the nanoscale in different geometries, such as nanowires, are explored to overcome these issues. , Trap-assisted nonvolatile flash memory is an essential building block in today’s large data storage devices, where a spatially confined metallic or semiconducting layer acts as a charge-trapping site . Charge trapping, obtained through optical illumination by implementing a photoactive material at the trap site, which is achieved by electrical biasing, allows the device to function as nonvolatile memory.…”

Ternary GePdS3: 1D van der Waals Nanowires for Integration of High-Performance Flexible Photodetectors

“…Low-dimensional nanomaterials have attracted considerable attention for the great potential in future practical applications . One-dimensional (1D) nanowires with high aspect ratios can be applied as an ideal platform for the conduction of electrons and photons, which provides possibilities for revolutionary photoelectronic devices including photodetectors, memristors, optoelectronic synapses, inverters, and light-emitting diodes (LEDs). , Especially, 1D photodetectors ground on traditional semiconductors (such as silicon, germanium, III–V A, II–VI A, and oxides) have been widely explored, − which have promising applications in image sensors, artificial vision, optical communication, environmental monitoring, analytical applications, gas sensing, etc. ,, Very recently, 1D van der Waals (vdW) materials have begun to sprout thanks to their intriguing properties . Compared with traditional semiconductors, photodetectors ground on 1D vdW materials demonstrate advantages in the following aspects: (I) The dangling bonds-free surface of 1D vdW materials is insensitive to adsorbates, surface contaminations, and lattice defects, which is beneficial for fabricating photodetectors with ultrahigh speed and highly sensitive photoresponse.…”

“…1 One-dimensional (1D) nanowires with high aspect ratios can be applied as an ideal platform for the conduction of electrons and photons, which provides possibilities for revolutionary photoelectronic devices including photodetectors, memristors, optoelectronic synapses, inverters, and light-emitting diodes (LEDs). 2,3 Especially, 1D photodetectors ground on traditional semiconductors (such as silicon, germanium, III−V A, II−VI A, and oxides) have been widely explored, 4−10 which have promising applications in image sensors, artificial vision, optical communication, environmental monitoring, analytical applications, gas sensing, etc. 3,11,12 Very recently, 1D van der Waals (vdW) materials have begun to sprout thanks to their intriguing properties.…”

“…2,3 Especially, 1D photodetectors ground on traditional semiconductors (such as silicon, germanium, III−V A, II−VI A, and oxides) have been widely explored, 4−10 which have promising applications in image sensors, artificial vision, optical communication, environmental monitoring, analytical applications, gas sensing, etc. 3,11,12 Very recently, 1D van der Waals (vdW) materials have begun to sprout thanks to their intriguing properties. 8 Compared with traditional semiconductors, photodetectors ground on 1D vdW materials demonstrate advantages in the following aspects: (I) The dangling bonds-free surface of 1D vdW materials is insensitive to adsorbates, surface contaminations, and lattice defects, which is beneficial for fabricating photodetectors with ultrahigh speed and highly sensitive photoresponse.…”