SnS2/Si nanowire vertical heterostructure for high performance ultra-low power broadband photodetector with excellent detectivity

Abstract

Nanoparticle-nanowire heterostructures provide a new platform for photodetection applications owing to their higher light absorption, large responsivity, and excellent separation efficiency of photogenerated electron-hole pairs. Herein, we report a SnS 2 /Si nanowire heterostructure photodetector with excellent optoelectronic properties. A high-quality SnS 2 /Si nanowire heterostructure was prepared by simply spin coating a wet chemically synthesized SnS 2 on a vertically standing Si nanowire made by metal assisted chemical etching. The as-prepared SnS 2 /Si nanowire heterostructure exhibits a robust p-n junction with excellent photodetector characteristics. The photodetector based on the heterostructure shows a photo-responsivity of ∼3.8 A W −1 , a specific detectivity up to ∼ 2 × 10 14 Jones, and an on/off ratio up to ∼ 10 2 at 340 nm illumination wavelength with a significantly low optical power density of 53.75 nW/mm 2 at zero bias (0 V). The photoresponsivity reached its maximum value of ∼10 2 A/W and detectivity of ∼1 × 10 14 Jones at the same wavelength with an applied bias of −2 V. In addition, the heterostructure photodetector provides significantly good photodetector key parameters (responsivity ∼5.3 A/W, detectivity ∼ 7.5 × 10 12 Jones, rise/decay time ∼0.4/0.4 s) at −2 V bias over a wide spectral range from 400 to 1100 nm. The Si nanowire and SnS 2 nanoparticle heterostructure devices with an enhanced junction area open up an exciting field for novel non-toxic and environmental friendly broadband optical detection applications and optoelectronic memory devices with high responsivity, ultrahigh sensitivity, and self-sufficient functionality at low power consumption and low cost with ease of processing.

Preparation of Nanostructured HgI2 Nanotubes /Si Photodetector by Laser Ablation in Liquid

“…The of HgI 2 /Si HJ photodetector show high quantum e ciency about 3×10 2 at 450nm. This high quantum e ciency gives an indication the high value of carrier collection e ciency[26][27][28].…”

Photodetection properties of populated Fe3O4@TiO2 core–shell/Si heterojunction prepared by laser ablation in water

“…The reverse current of the photodetector was increased after being illuminated with white light due to the generation of e-h pairs as a result of photon absorption in the sensitive area. The photocurrent of the Fe 3 O 4 @TiO 2 core-shell/Si is larger than that of Fe 3 O 4 / Si by a factor of 1.6 at a bias voltage of 5 V and a light intensity of 30mW/cm 2 due to the increase in the light absorption as well as the decrease in the structural defects [35,36]. On the other hand, the TiO 2 NPs act as a buffer layer that contributes to the reduction in the lattice constant mismatch between the Fe 3 O 4 and the silicon substrate.…”

Silicon Nanowire Arrays with Nitrogen-Doped Graphene Quantum Dots for Photodetectors

“…In order to obtain better performance in various optoelectronic and photodetection applications many researchers have been focused on texturing the surface of silicon with nanostructures (such as nanocones, NWs, etc.). One dimensional (1-D) SiNWs have enhanced light absorption capability and received increasing research interest because of their higher surface-to-volume ratio, strong light trapping effect, fast charge transport, and high charge collection efficiency by shortening the carrier transport path in comparison to bulk Si. , Thus, changes in the length, diameter, and spacing of SiNWs developed after the etching process reveal improvement of material properties, such as light absorption and scattering, enhancement of surface built-in-field, , electron–hole recombination, quantum confinement, and so forth. This leads to the enhanced application in photodetectors, − photovoltaics high sensitivity sensors, , field-effect-transistors, , thermoelectric devices, super capacitors, and so on.…”

“…The SiNW-based heterostructure has gained increasing interest in current research to develop high efficiency photodetectors because of the easy synthesis, cost-effective processing, and enhanced effective junction area compared to the bulk or thin film responsible for photocarrier generation and separation. ,, The heterojunction area can be improved via chemical etching of NWs to minimize the NW bunch formation and core–shell structure of SiNWs with the other heterostructure materials. Many III–V or II–VI semiconductor quantum dots (CdTe, CdS, ZnO, etc.)…”