An X-band inverse class-F power amplifier is realized by a 1-mm AlGaN/GaN high electron mobility transistor (HEMT). The intrinsic and parasitic components inside the transistor, especially output capacitor C ds , influence the harmonic impedance heavily at the X-band, so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane. Experiment results show that, in the continuous-wave mode, the power amplifier achieves 61.7% power added efficiency (PAE), which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT. To the best of our knowledge, this is the first inverse class-F GaN internally-matched power amplifier, and the PAE is quite high at the X-band.
We present a design and realization of a high efficiency C-Band (5.2 GHz-5.8 GHz) internally-matched gallium nitride (GaN) power amplifier (PA). To reduce power dissipation and to achieve high efficiency, both input and output matching networks, along with 2nd-harmonic modulation circuits, are designed accurately according to the source and load optimum impedances extracted by source-pull and load-pull measurements. The PA realizes an excellent rf performance under a pulsed condition, demonstrating a maximum output power of 52.2 dBm (164 W) with at least 13.5 dB gain in the frequency range from 5.2 GHz to 5.8 GHz (10% relative bandwidth). At the same time, a power-added efficiency (PAE) of 69.4% is observed at 5.6 GHz and over 65.0% throughout the whole bandwidth. The PAE is the state-of-art performance for C-band GaN high-electron-mobility transistor PA with such high output power, to the best of our knowledge.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.