X-band inverse class-F GaN internally-matched power amplifier

Abstract

An X-band inverse class-F power amplifier is realized by a 1-mm AlGaN/GaN high electron mobility transistor (HEMT). The intrinsic and parasitic components inside the transistor, especially output capacitor C ds , influence the harmonic impedance heavily at the X-band, so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane. Experiment results show that, in the continuous-wave mode, the power amplifier achieves 61.7% power added efficiency (PAE), which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT. To the best of our knowledge, this is the first inverse class-F GaN internally-matched power amplifier, and the PAE is quite high at the X-band.

Recovery of PMOSFET NBTI under different conditions

“…It is clear that the time exponent of the second stage is the same as that of the first stage, both stages meet the same degradation model, i.e., the H-H + reaction diffusion model. [16]…”

Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress

“…From the definition of the device threshold voltage, the negative drift of threshold voltage means the generation of positive charges, including the interface traps and the oxide traps during stress. [19] The preliminary study [20][21][22] has shown that under the action of holes in the inversion layer, the Si-H bond energy is weakened at the Si/SiO 2 interface. It brings about breaking of Si-H bonds at high temperature, which forms the dangling bond of silicon, namely, interface trap, and H + that can migrate into the oxide layer.…”

Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance

“…Such works have expressed the benefits of such representation to accurately model the impact of gate resistance on cut‐off frequency (f T ), the maximum frequency of oscillation (f max ), noise parameters, and transconductance . To our knowledge, state‐of‐the‐art GaN MMIC circuits use models with lumped gate resistance . This paper makes it possible for the first time to highlight the interest of considering the distributed gate resistance on the performance of the GaN transistor and MMIC associated it.…”