A Scalable Active Compensatory Sub-Circuit for Accurate GaN HEMT Large Signal Models

Zheng, Jiaxin; H., X.; Lu, Yang; Zhao, Bingxuan; Zhang, H. S.; Zhang, M.

doi:10.1109/lmwc.2016.2555940

Cited by 11 publications

(6 citation statements)

References 6 publications

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“…These transistors, mostly MOSFETs and IGBTs, are made from materials such as silicon carbide (SiC), gallium nitride (GaN), indium phosphide (InP), aluminum gallium nitride (AlGaN), etc. to list just a few, have continued to show a lot of promise as improvements are being made faster and faster as the different researches surface [171][172][173][174][175][176][177][178][179][180][181][182][183]. Taking advantage of this technology, manufacturers of power electronic switches can now begin to look into making the four quadrant switches.…”

Section: Discussionmentioning

confidence: 99%

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Jiya

Gouws

2020

Micromachines

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As the need for green and effective utilization of energy continues to grow, the advancements in the energy and power electronics industry are constantly driven by this need, as both industries are intertwined for obvious reasons. The developments in the power electronics industry has over the years hinged on the progress of the semiconductor device industry. The semiconductor device industry could be said to be on the edge of a turn into a new era, a paradigm shift from the conventional silicon devices to the wide band gap semiconductor technologies. While a lot of work is being done in research and manufacturing sectors, it is important to look back at the past, evaluate the current progress and look at the prospects of the future of this industry. This paper is unique at this time because it seeks to give a good summary of the past, the state-of-the-art, and highlight the opportunities for future improvements. A more or less ‘forgotten’ power electronic switch, the four-quadrant switch, is highlighted as an opportunity waiting to be exploited as this switch presents a potential for achieving an ideal switch. Figures of merit for comparing semiconductor materials and devices are also presented in this review.

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Section: Discussionmentioning

confidence: 99%

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Jiya

Gouws

2020

Micromachines

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“…Non-linear components of the unit GaN-HEMT included the gate-source capacitor (C gs ), gate-drain capacitor (C gd ), and drain-source capacitor (C ds ) [9,12,20]. Each component was extracted based on the measured S-parameter of a wide operation range, and based on the extracted data, the nonlinear capacitors were empirically modeled using continuous and differentiable functions [9][10][11][12][13][14][15]. The modeled non-linear components are expressed as follows:…”

Section: Modeling the Non-linear Capacitorsmentioning

confidence: 99%

“…In [12], a channel current considering the device physics was proposed. Most of the previous transistor models with various output power capacities are directly based on the measured results for the transistor itself [12][13][14][15][16]. However, in the case of transistors with a high output power capacity, it is very difficult to obtain an accurate large-signal model directly.…”

Section: Introductionmentioning

confidence: 99%

Scaled GaN-HEMT Large-Signal Model Based on EM Simulation

Lee

Kang

Choi³

et al. 2020

Electronics

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This paper presents a scaled GaN-HEMT large-signal model based on EM simulation. A large-signal model of the 10-finger GaN-HEMT consists of a large-signal model of the two-finger GaN-HEMT and an equivalent circuit of the interconnection circuit. The equivalent circuit of the interconnection circuit was extracted according to the EM simulation results. The large-signal model for the two-finger device is based on the conventional Angelov channel current model. The large-signal model for the 10-finger device was verified through load-pull measurement. The 10-finger GaN-HEMT produced an output power of about 20 W for both simulation and load-pull measurements.

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“…The interest in GaN high‐electron mobility transistors (HEMTs) is strongly linked to their exceptional capabilities for high power and high‐frequency applications such as satellite communications and automotive radars. Thence, modeling and characterization of GaN HEMT devices at high frequency have attracted much attention from many researchers to provide accurate models to circuit designers 1–5 . However, each model requires precise extraction of its small‐signal equivalent circuit model (EC‐SSM) parameters 6–12 .…”

Section: Introductionmentioning

confidence: 99%

An efficient extrinsic capacitances extraction method for small‐signal GaN HEMT devices

Zatout

Maafri

Taibi

et al. 2023

Int J Numerical Modelling

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This article proposes a new extraction technique to determine the GaN HEMT extrinsic capacitances over a wide frequency band on two different substrates, namely, the silicon and the silicon carbide. The proposed technique, which uses a small‐signal model equivalent circuit under cold pinch‐off operating conditions, is based on the proposal of a new small‐signal equivalent circuit which allows extracting first the extrinsic resistances and inductances. Then comes the extraction of extrinsic capacitances at high frequency. The proposed approach achieved successful results through close agreement with measured data up to 60 GHz.

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A Scalable Active Compensatory Sub-Circuit for Accurate GaN HEMT Large Signal Models

Cited by 11 publications

References 6 publications

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future

Scaled GaN-HEMT Large-Signal Model Based on EM Simulation

An efficient extrinsic capacitances extraction method for small‐signal GaN HEMT devices

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