In order to study total dose radiation effects of PbZr x Ti 1−x O 3 (PZT) film made with the pulsed excimer laser deposition (PLD) technique, hysteresis loops and capacitance-voltage (C-V ) curves of PZT film capacitors have been measured before and after γ -ray irradiation. The results show that, in a range of 0-2 × 10 5 Gy (Si), with increasing total dose, the remanent polarization 2P r increased while dielectric constant ε decreased. This can be explained by charges trapped by some defects during irradiation.
C-axis oriented Y1BazCu307-~ (E'BCOJ thin films and PbZro.52 Ti,,.,,O3 J P Z T ) / J Y B C O ) heterostructures were deposited on single-crystal LaillO:, by Kd:I.:4G pulsed laser deposition. The results showed that the YBCO films exhibited superconducting transition temperature above 86 K and ion beam channeling minimum j,ields yll,ilr of 49%, indicating the relatively good quality of YBCO films deposited on the LaAlOd substrate. The PZT filnis i,n situ grown on the YBCO films were epitaxially c-axis oriented with a saturation polarization and i-eniane~~ce as high as 57pC/cm2 and 39pC/cm2 (at 204 kV/cm). respectivel-v. The coercive field of PZT films is about 55kI'/cm.
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