Epitaxial Pb(Zr _0.52 Ti _0.48 ) O ₃ /Y ₁ Ba ₂ Cu ₃ O _{7- x} Heterostructure Prepared

Abstract

C-axis oriented Y1BazCu307-~ (E'BCOJ thin films and PbZro.52 Ti,,.,,O3 J P Z T ) / J Y B C O ) heterostructures were deposited on single-crystal LaillO:, by Kd:I.:4G pulsed laser deposition. The results showed that the YBCO films exhibited superconducting transition temperature above 86 K and ion beam channeling minimum j,ields yll,ilr of 49%, indicating the relatively good quality of YBCO films deposited on the LaAlOd substrate. The PZT filnis i,n situ grown on the YBCO films were epitaxially c-axis oriented with a saturation polarization and i-eniane~~ce as high as 57pC/cm2 and 39pC/cm2 (at 204 kV/cm). respectivel-v. The coercive field of PZT films is about 55kI'/cm.