Total dose radiation effects of Pt/PZT/Pt ferroelectric capacitors fabricated by PLD method

Gao, Jinsong; Zheng, Lirong; Huang, Bi-ping; Song, Zhaoning; Yang, Lixin; Fan, Yong; Zhu, Dapeng; Lin, Chenglu

doi:10.1088/0268-1242/14/9/315

Cited by 8 publications

(7 citation statements)

References 10 publications

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“…At the elevated applied electric field used to measure saturated electromechanical response (250 kV cm −1 DC bias), the drive for domain wall motion exceeds that of the defect, and the degradation of functional response is, at least partially, overcome, even at higher TID levels. Indeed, the values of φ N for d 33 , f , saturation measurements are very similar to those extracted from work by Gao et al ., for measurements of dielectric permittivity of irradiated PZT thin films with an applied 133 kV cm −1 DC bias 54 . The implication that applied electric field potentially negates the deleterious effects of defects created by gamma irradiation is not new.…”

Section: Effect Of Microstructure On Defect Interactions In Ferroelecmentioning

confidence: 99%

Phenomenological Model for Defect Interactions in Irradiated Functional Materials

Brewer

Cress

Williams

et al. 2017

Sci Rep

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The ability to tailor the performance of functional materials, such as semiconductors, via careful manipulation of defects has led to extraordinary advances in microelectronics. Functional metal oxides are no exception – protonic-defect-conducting oxides find use in solid oxide fuel cells (SOFCs) and oxygen-deficient high-temperature superconductors are poised for power transmission and magnetic imaging applications. Similarly, the advantageous functional responses in ferroelectric materials that make them attractive for use in microelectromechanical systems (MEMS), logic elements, and environmental energy harvesting, are derived from interactions of defects with other defects (such as domain walls) and with the lattice. Chemical doping has traditionally been employed to study the effects of defects in functional materials, but complications arising from compositional heterogeneity often make interpretation of results difficult. Alternatively, irradiation is a versatile means of evaluating defect interactions while avoiding the complexities of doping. Here, a generalized phenomenological model is developed to quantify defect interactions and compare material performance in functional oxides as a function of radiation dose. The model is demonstrated with historical data from literature on ferroelectrics, and expanded to functional materials for SOFCs, mixed ionic-electronic conductors (MIECs), He-ion implantation, and superconductors. Experimental data is used to study microstructural effects on defect interactions in ferroelectrics.

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Section: Effect Of Microstructure On Defect Interactions In Ferroelecmentioning

confidence: 99%

Phenomenological Model for Defect Interactions in Irradiated Functional Materials

Brewer

Cress

Williams

et al. 2017

Sci Rep

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“…[49][50][51][52] There is potential for MEMS or NEMS (NanoElectroMechanical Systems) switches to replace semiconductor devices for radiation hard logic and memory devices, again for space and nuclear electronic applications. [49][50][51][52] There is potential for MEMS or NEMS (NanoElectroMechanical Systems) switches to replace semiconductor devices for radiation hard logic and memory devices, again for space and nuclear electronic applications.…”

Section: Irradiation Of Ferroelectric Materialsmentioning

confidence: 99%

“…Radiation-induced charge trapping within the gate dielectric of silicon devices can cause failure or loss of data. 49 The sensitivity of PZT to gamma radiation effects appears to be strongly dependent on the fabrication method and quality, 49,52 with the effect of the radiation depending on the initial domain pattern 50 and pre-existing defect structures. MEMS switches, however, use a metal to metal contact which is inherently radiation hard and is mechanically decoupled from the "gate" circuit.…”

Section: Irradiation Of Ferroelectric Materialsmentioning

confidence: 99%

“…51 The problem is exacerbated with the trend to thinner gate dielectrics and reduced size in modern devices. 52 These studies deal with the effects of X-ray, 50 gamma ray 49,51 and relatively low energy neutron irradiation. The critical factor for MEMS switches in a radiation environment is not the contact mechanism, but the actuation and the performance of the piezoelectric material.…”

Section: Irradiation Of Ferroelectric Materialsmentioning

confidence: 99%

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Ferroelectric materials for fusion energy applications

Cain

Reece

2016

J. Mater. Chem. A

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A power generating fusion reactor will operate under extreme conditions of temperature and high-energy particle fluences. The energy is produced by the nuclear fusion reaction of deuterium and tritium in a plasma, which can reach temperatures of the order of 100 million C. The reaction generates helium, high energy (14 MeV) neutrons and gamma rays. The operation of a fusion reactor requires diagnostic equipment for the monitoring of temperature, pressure, magnetic fields, radiation energy and fluence, and other operational parameters. Functional materials, in particular ferroelectrics, can play many useful roles in these types of measurement. Many ferroelectrics are also known for their radiation hardness, which may favour their use in this environment. This review paper describes the functions where ferroelectrics may find useful application in a reactor, the effects of the reactor environment on materials in general, and the effects on ferroelectrics in particular. Though this review is centered on the technology associated with the Joint European Torus (JET), International Thermo-Nuclear Reactor (ITER) and the future planned DEMOnstration Power Plant (DEMO) fusion reactor types there are some similar materials related issues associated with the many other systems being explored worldwide. Conclusions are then made about the future for ferroelectric materials in fusion reactors and some of the research challenges that need to be addressed. Fig. 5 (a) Hysteresis loop of triglycine sulphate before irradiation. (b) Hysteresis loop after irradiation of a single domain crystal of triglycine sulphate. (c) Hysteresis loop after irradiation of a multidomain crystal of triglycine sulphate (redrawn from ref. 48 with permission from Elsevier). J. Mater. Chem. AThis journal is

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“…See [7,8] for example. The effects of γ-ray total dose radiation on such ferroelectric capacitors have been investigated to evaluate vulnerability or radiation hardness.…”

Section: Effect Of Mild Radiation Dose On Phase Shifter Performancementioning

confidence: 99%

Recent Advances in Microwave Applications of Thin Ferroelectric Films at the NASA Glenn Research Center

et al. 2004

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We report on recent developments in microwave applications and understanding of thin Ba 50 Sr 50 TiO 3 films. Most of our recent efforts have focused on developing low loss, wide band phase shifters from X-band (8.4 GHz) to Ka-Band (26.5 GHz) for scanning reflectarray antennas. Attempts to reduce tanδ by Mn-doping Ba 50 Sr 50 TiO 3 films are briefly discussed. We have demonstrated a hybrid device at X-band that produces in excess of 300 degrees of phase shift with about 3.5 dB insertion loss and greater that 10% bandwidth. Preliminary results are presented here. The effects of mild (600 rad Si) proton radiation on device performance will also be discussed. Preliminary results on optical phase shifters will be included.

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Total dose radiation effects of Pt/PZT/Pt ferroelectric capacitors fabricated by PLD method

Cited by 8 publications

References 10 publications

Phenomenological Model for Defect Interactions in Irradiated Functional Materials

Phenomenological Model for Defect Interactions in Irradiated Functional Materials

Ferroelectric materials for fusion energy applications

Recent Advances in Microwave Applications of Thin Ferroelectric Films at the NASA Glenn Research Center

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