The photon density in solar cells is usually optimized through tailored antireflection coatings (ARCs). We develop an analytical model to describe metal hybrid nanoparticles (NPs)‐based ARC, where metal NPs are embedded in a standard ARC on a Si‐substrate. A point dipole approach is implemented to calculate diffuse reflectance by NPs, while transfer matrix method is used for specular reflectance from front surface. We found that embedding metal NPs in SiN ARC enhances the antireflection property of the former at non‐normal angles of incidence (AOI) of light. Electric field distribution patterns of radiation in the substrate by NPs are calculated for various AOI, which support the improvements in the antireflection property. Weighted solar power transmittances from ARCs are calculated, which show that Ag‐NPs (radius = 35 nm) embedded in SiN (thickness = 70 nm) performs better than SiN for AOI over 74°, whereas Al‐NPs (radius = 35 nm) embedded in SiN (thickness = 70 nm) performs better for AOI over 78°.
Herein, we report a theoretical investigation of large photocurrent density enhancement in a GaAs absorber layer due to non-absorbing spherical dielectric (SiO2) nanoparticles-based antireflection coating. The nanoparticles are embedded in a dielectric matrix (SiN) which improves the antireflection property of SiN ($$\lambda /4$$
λ
/
4
coating) and let to pass more photons into the GaAs layer. The improvement is noticed omnidirectional and the highest is more than 100% at 85° angle of incidence with the nanoparticles’ surface filling density of 70%. Sunrise to sunset calculation of normalized photocurrent density over the course of a year have also shown improvements in the nanoparticles’ case.
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