Large photocurrent density enhancement assisted by non-absorbing spherical dielectric nanoparticles in a GaAs layer

Abstract

Herein, we report a theoretical investigation of large photocurrent density enhancement in a GaAs absorber layer due to non-absorbing spherical dielectric (SiO2) nanoparticles-based antireflection coating. The nanoparticles are embedded in a dielectric matrix (SiN) which improves the antireflection property of SiN ($$\lambda /4$$ λ / 4 coating) and let to pass more photons into the GaAs layer. The improvement is noticed omnidirectional and the highest is more than 100% at 85° angle of incidence with the nanoparticles’ surface filling density of 70%. Sunrise to sunset calculation of normalized photocurrent density over the course of a year have also shown improvements in the nanoparticles’ case.

Efficiency improvement in InP thin film solar cell using dielectric nanobars

“…GaAs thin film solar cell with an array of hemispherical TiO 2 nanoparticles has been designed for light trapping and the efficiency by 47% related to the conventional cell has been reported [9]. SiN layer including SiO 2 nanospheres at the top of the GaAs film has been implemented and an enhancement more than 120% in the J ph is achieved related to the GaAs cell with SiN coating [16]. GaAs based solar cell including TiO 2 nanopyramid arrays at the top and backside the absorption layer has been proposed and the J ph of 20.94 (mA cm −2 ) with an increment about 37% in the J ph compared to the conventional GaAs film has been reported [17].…”