In EUV lithography, extreme ultraviolet radiation of 13.5 nm wavelength is used to print feature with resolutions consistent with the requirements of the 45 nm technology node or below. EUV is produced by heating xenon, tin, or other elements to a plasma state, using either magnetic compression or laser irradiation. The key concerns -identified at the third EUV-Symposium -are the ability to supply defect-free masks and to increase source component lifetimes to meet the wafer throughput requirements for high volume manufacturing.Source availability and performance -however -made steady progress within the last years on two lines of actions: High power sources for high volume production and medium and low power sources for allowing in-house metrology and performance studies on EUV-mask-blanks, EUV-Masks, photoresists and optical elements.For "volume production sources" 50 W of collected EUV powers are already available by various suppliers. Compact discharge sources of medium power in the range of 10-100 mW / sr / 2% bandwidth and low power EUV-tubes of lowest cost of ownership and superior stability are ideal for peripheral metrology on components for EUV-Lithography. These low power sources supplement beamlines at storage rings by transferring EUV-applications to individual R&D labs.Proceeding integration of those EUV sources into tools for technology development like open frame and microexposers, and in tools for actinic metrology is the best proof of the progress. As of today, the first EUV sources and measurement equipment are available to be used for EUV system, mask, optics and component as well as lithography process development. With the commercial availability of EUV-plasma sources other applications using short wavelength, XUV-radiation will be feasible in a laboratory environment. Some examples of XUV applications are discussed.

Schott Lithotec has introduced all relevant technology steps to manufacture EUV mask blanks in its advanced quality mask blank manufacturing line -ranging from Low Thermal Expansion Material (LTEM) high quality substrate polishing to low defect blank manufacturing. New polishing and cleaning technologies, improved sputter technology and updated metrology enable us to produce EUVL mask blanks meeting already some of the roadmap requirements. Further R&D is ongoing to path the way to the pilot production of EUV blanks which meet the beta-specifications end of 2005.We present the status of our EUVL substrate program and report on the recent results of our activities for low defect multilayer, buffer and absorber coating including new absorber materials. Recent results from the production of full LTEM EUV blanks with multilayer, buffer and absorber coatings will be presented. Process steps in the EUVL mask blank fabrication in a production environment were characterized in terms of defects; the process improvement potential is discussed. We will also throw a light on the aspects of changed layer properties after a longer period of storage.In addition, special metrology methods for EUVL components are currently being developed within the program. The status of the high throughput EUV-Reflectometer for mask blanks will be presented. We developed new processes to achieve EUVL requirements.

Extreme ultraviolet lithography (EUVL) is the leading technology for patterning at the 32 nm technology node and beyond. EUVL light at 13.5 nm is used to print circuits. This light is produced by heating fuel (Xe, Sn) in EUV sources to a very high temperature by using either magnetic compression or laser irradiation. Today EUV source power remains the number one concern for implementation of EUVL in high volume manufacturing. Over the last few years, much progress has been made in EUV source performance and availability. Today, alpha level high power (-10 W) EUV sources have been integrated in alpha level EUVL scanners. Medium and low power EUV sources are used for in-house metrology and performance studies on EUV mask blanks, EUV masks, photoresists, and optical elements. These compact discharge sources with medium power in the range of 10-100 mW/sr/2% bandwidth and low power EUV tubes are being used by various R&D labs for development of mask, optics, and resists. Pre viously, development of EUVL was mostly located at beamlines; today, these low power EUV sources are instrumental in allowing in-house R&D projects. In this paper, the latest status of high power EUV sources, low and medium power metrology sources, and some of their applications are described

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