High speed reflectometer for EUV mask-blanks

Wies, Christian; Lebert, R.; Jagle, Bernhard; Juschkin, Larissa; Sobel, Frank; Seitz, H.; Walter, Ronny; Laubis, Christian; Scholze, Frank; Biel, W.; Steffens, Oliver

doi:10.1117/12.599776

Cited by 2 publications

(2 citation statements)

References 5 publications

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“…[33,34]. The underlying important parameter for the density impact on the brightness is the Holstein escape (7) factor or the optical density, τm. Figure 11 shows this parameter with the example of a GdXXIII and TbXXIV ion for the parameters given above.…”

Section: Example For Emitter At 67 Nmmentioning

confidence: 99%

“…Currently, utilizing extreme ultraviolet lithography to produce more powerful semiconductor chips is the most important application, which has driven the development of optics and a compact light source for the wavelength of 13.5 nm [1]. Other examples of applications making use of compact light sources are in the field of EUV lithography, i.e., use for mirror contamination studies [2][3][4], qualification of optical elements and masks [5][6][7][8][9][10][11] or photo resist development [12,13]. Further examples are X-ray microscopy in the spectral range of the water window (2.4-4.4 nm) for the imaging of biological samples in their natural wet environment [14][15][16][17][18] or XUV-based reflectometry for surface analysis [19,20].…”

Section: Introductionmentioning

confidence: 99%

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Extreme Ultraviolet Radiation Sources from Dense Plasmas

Bergmann

2023

Atoms

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The concept of dense and hot plasmas can be used to build up powerful and brilliant radiation sources in the soft X-ray and extreme ultraviolet spectral range. Such sources are used for nanoscale imaging and structuring applications, such as EUV lithography in the semiconductor industry. An understanding of light-generating atomic processes and radiation transport within the plasma is mandatory for optimization. The basic principles and technical concepts using either a pulsed laser or a gas discharge for plasma generation are presented, and critical aspects in the ionization dynamics are outlined within the framework of a simplified atomic physics model.

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Section: Example For Emitter At 67 Nmmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Extreme Ultraviolet Radiation Sources from Dense Plasmas

Bergmann

2023

Atoms

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Actinic EUV-mask metrology: tools, concepts, components

Lebert

Farahzadi

Diete

et al. 2011

27th European Mask and Lithography Conference

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There is a strong demand for standalone actinic tools for mask blank and mask metrology. We expect to deliver contributions to key issues for the infrastructure tools such as actinic reflectometer, actinic defect inspection and components like high brightness sources together with our partners.With our EUV-reflectometer EUV-MBR we are ready to fulfill HVM requirements in accurate and sensitive spectral metrology. Migrating from mask blanks to masks is supported with integrated fiducial mark detection and small spot sizes of down to < 0.03 mm². Hence, the EUV-MBR is able to detect minimal variations on mask blank and can support process monitoring for our partners in European EXEPT project.For actinic blank inspection a proof of concept experiment based on an EUV microscope at BASC's EUV-Lamp allows for comparing actinic signatures with AFM scans. Results allow for extrapolation to sub 30 nm sensitivity and fast full blank scan.For LPP sources we demonstrated a new concept utilizing a laser, with parameters optimized for high brightness EUV generation and a new regenerative target concept for high position stability, gain, repetition rate operation and efficiency in the first proof of concept experiment. Up to 350 W/(mm² sr) from < 20 µm source size have been demonstrated.

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High speed reflectometer for EUV mask-blanks

Cited by 2 publications

References 5 publications

Extreme Ultraviolet Radiation Sources from Dense Plasmas

Extreme Ultraviolet Radiation Sources from Dense Plasmas

Actinic EUV-mask metrology: tools, concepts, components

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