2005
DOI: 10.1117/12.599776
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High speed reflectometer for EUV mask-blanks

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“…[33,34]. The underlying important parameter for the density impact on the brightness is the Holstein escape (7) factor or the optical density, τm. Figure 11 shows this parameter with the example of a GdXXIII and TbXXIV ion for the parameters given above.…”
Section: Example For Emitter At 67 Nmmentioning
confidence: 99%
See 1 more Smart Citation
“…[33,34]. The underlying important parameter for the density impact on the brightness is the Holstein escape (7) factor or the optical density, τm. Figure 11 shows this parameter with the example of a GdXXIII and TbXXIV ion for the parameters given above.…”
Section: Example For Emitter At 67 Nmmentioning
confidence: 99%
“…Currently, utilizing extreme ultraviolet lithography to produce more powerful semiconductor chips is the most important application, which has driven the development of optics and a compact light source for the wavelength of 13.5 nm [1]. Other examples of applications making use of compact light sources are in the field of EUV lithography, i.e., use for mirror contamination studies [2][3][4], qualification of optical elements and masks [5][6][7][8][9][10][11] or photo resist development [12,13]. Further examples are X-ray microscopy in the spectral range of the water window (2.4-4.4 nm) for the imaging of biological samples in their natural wet environment [14][15][16][17][18] or XUV-based reflectometry for surface analysis [19,20].…”
Section: Introductionmentioning
confidence: 99%