The monolithic integration of a SiGe-optical waveguide with a detector based on SiGeabsorbing layers is presented. A maximum internal quantum efficiency of i = 40 % has been measured at A = 1.3 jzm, which corresponds to an external efficiency of i = ii .Thi s device is suitable for 2.5 GBit/s data transmission, the performance is limited by the RC time constant due to a capacitance of C = 1.7 pF.
Integrated Optics in SOT need a concept for passive optical couplers, which is highly insensitive to fabrication tolerances. For this purpose directional couplers as well as couplers based on Multi-Mode-Interference (MMI) have been investigated, both theoretically and experimentally. BESOI material with a top layer thickness of 1 1 pin is optimally adjusted to single-mode-fibers resulting in a field mismatch loss of 0. 17 dB. For fabrication tolerances of 5 %, only MMIcouplers showed an insensitive behaviour with additional losses of 0.4 dB and a crosstalk (CRT) of -30 dB at a wavelength of 1.3 pin. A particular interest was paid to the additional coupling in the access region of the coupler, since there is no possibility to its compensation in this concept. The potential application of couplers in combination with phase shifters was studied theoretically as well. Realized MMT-based cross-couplers showed additional losses of 1 dB and a CRT of -17 dB, the best values for SOT-based couplers reported so far.
By time domain measurements on a carrier injection switch using Ge-indiffused waveguides in silicon the plasma dispersion and the thermo-optical effect were separated and quantified. Optimized thermo-optical switches in silicon-on-insulator with low switching powers are also presented. Intro duct ionSilicon is a highly developed and inexpensive material and it offers a large potential for low cost optical devices. Due to the micromechanical properties for instance silicon can be used for optical motherboards as well as for automatic fiber-chip coupling by etched V-grooves.The goal of our research is the development of optical components in silicon which are compatible to the standard Si-technology in order to take advantage of existing production lines. Since the electric-field effects (Kerr-effect, "electro-refraction" and "electro-absorption") in silicon are too small for efficient devices [1], only the plasma dispersion effect [2] 21 3 \=1.3m: -=-1.41•1O cm (1) and the thermo-optical effect (-= +2 . iO' K [3]) are promising candidates for the realization of optical waveguide switches in silicon (n: refractive index, N: carrier concentration, T: temperature, ,\: wavelength). In this work we will discuss a carrier injection switch based on a singlemoded Ge-indiffused waveguide. Similar to [2,4] the carrier injection switch shows the coexistence of the plasma dispersion and the thermo-optical effect, since the necessary injection current causes electrical losses and therefore heat. By analyzing the switch characteristics in time domain both 332 ISPIE Vol. 2449 O-8194-1800-5/95/$6.OO Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/24/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.