&lt;title&gt;Integrated optoelectronic waveguide detectors in SiGe for optical communications&lt;/title&gt;

Splett, A.; Zinke, T.; Schueppert, Berndt; Petermann, K.; Kibbel, H.; Herzog, H.‐J.; Presting, H.

doi:10.1117/12.221403

Cited by 7 publications

(7 citation statements)

References 17 publications

(21 reference statements)

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“…In 1994, Splett et al [125] [35] reported another version of the p-i-n SiGe MQW detector (figure 17) this time integrated with a single mode rib waveguide. They achieved an external quantum efficiency of up to 12% at λ 0 =1.282 µm.…”

Section: Detectorsmentioning

confidence: 99%

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Silicon photonics: the early years

2005

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The purpose of this paper is to set the scene for what promises to be an outstanding conference. To this end the paper will survey the early work in silicon photonics from the late 1980s to the mid 1990s. This was when the more fundamental studies of basic building blocks were carried out, such as study of the silicon optical waveguide itself, the contributions to loss and improvement of waveguiding devices. Issues such as how to achieve modulation, and how to implement a modulator, the criteria for single mode propagation will also be covered, as well as work on the beginnings of optical circuits in silicon and SOI. The focus will be upon pure silicon, usually, but not exclusively in the form of Silicon on Insulator (SOI), as opposed to work on compounds such as SiGe or SiC. Much of this work still resonates with work being carried out today, because the move to smaller and more efficient devices means that some of these issues must be revisited in order to achieve optimal device performance. Hence the paper will provide a summary of the early work on silicon photonics, and attempt to relate it to some of the issues being studied today.

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Section: Detectorsmentioning

confidence: 99%

“…Optical and electronic integration has taken place only in a very simple way (e.g. [33], [34], [35]), and remains a challenge. However, recent initiatives such as the DARPA EPIC programme [36] will also begin to address these issues.…”

Section: Monolithic Integrated Devicesmentioning

confidence: 99%

Silicon photonics: the early years

2005

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“…Light detection is another major research topic in silicon photonics. Strained germanium and silicon germanium push the absorption out to 1.55 μm wavelength and are attractive since it is compatible with CMOS processing capabilities [12,13]. Integration of the photodetector with the receiver is critical for lower capacitance and higher sensitivity [14].…”

Section: Introductionmentioning

confidence: 99%

Photonic Integration on the Hybrid Silicon Evanescent Device Platform

Park

Fang

Liang

et al. 2008

Advances in Optical Technologies

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This paper reviews the recent progress of hybrid silicon evanescent devices. The hybrid silicon evanescent device structure consists of III-V epitaxial layers transferred to silicon waveguides through a low-temperature wafer bonding process to achieve optical gain, absorption, and modulation efficiently on a silicon photonics platform. The low-temperature wafer bonding process enables fusion of two different material systems without degradation of material quality and is scalable to wafer-level bonding. Lasers, amplifiers, photodetectors, and modulators have been demonstrated with this hybrid structure and integration of these individual components for improved optical functionality is also presented. This approach provides a unique way to build photonic active devices on silicon and should allow application of silicon photonic integrated circuits to optical telecommunication and optical interconnects.

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“…Various Ge waveguide photodetectors (WPD) have been demonstrated using epitaxial growth on silicon photonics platform with high quantum efficiencies [1,2] and have been integrated with CMOS electronics operating at 10 Gb/s [3]. Also, SiGe or engineered Si WPDs are being investigated to overcome the lattice mismatch of Ge photodetectors [4,5]. On III-V substrates pre-amplified photoreceivers have been demonstrated incorporating optical amplifiers with photodetectors for increased receiver sensitivity [6].…”

Section: Introductionmentioning

confidence: 99%

A hybrid AlGaInAs-silicon evanescent preamplifier and photodetector

Park¹,

Kuo²,

Fang³

et al. 2007

Opt. Express

102

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We report the integration of a hybrid silicon evanescent waveguide photodetector with a hybrid silicon evanescent optical amplifier. The device operates at 1550 nm with a responsivity of 5.7 A/W and a receiver sensitivity of -17.5 dBm at 2.5 Gb/s. The transition between the passive silicon waveguide and the hybrid waveguide of the amplifier is tapered to increase coupling efficiency and to minimize reflections.

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<title>Integrated optoelectronic waveguide detectors in SiGe for optical communications</title>

Cited by 7 publications

References 17 publications

Silicon photonics: the early years

Silicon photonics: the early years

Photonic Integration on the Hybrid Silicon Evanescent Device Platform

A hybrid AlGaInAs-silicon evanescent preamplifier and photodetector

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