Photonic Integration on the Hybrid Silicon Evanescent Device Platform

Abstract

This paper reviews the recent progress of hybrid silicon evanescent devices. The hybrid silicon evanescent device structure consists of III-V epitaxial layers transferred to silicon waveguides through a low-temperature wafer bonding process to achieve optical gain, absorption, and modulation efficiently on a silicon photonics platform. The low-temperature wafer bonding process enables fusion of two different material systems without degradation of material quality and is scalable to wafer-level bonding. Lasers, amplifiers, photodetectors, and modulators have been demonstrated with this hybrid structure and integration of these individual components for improved optical functionality is also presented. This approach provides a unique way to build photonic active devices on silicon and should allow application of silicon photonic integrated circuits to optical telecommunication and optical interconnects.

Photonic nano-device for optical signal processing

“…SOI is a new way for chip-making process due to its high index contrast between the silicon core and the silica insulator, which allows strong confinement of light and enables compact devices. There are several main research areas of concentration to make silicon photonics a reality: light source [35], light guide [36], modulation [37], photo detection [38], low cost assembly, and intelligence to drive all of these.…”

A Distributed Bragg Reflector Silicon Evanescent Laser

“…The DBR-SEL is fabricated on the hybrid silicon evanescent waveguide platform as described in [5]. Fig.…”

“…1(c)] are placed inside the cavity. The tapers provide an adiabatic transition between the passive silicon regions and the silicon evanescent waveguide regions by varying the width of the upper III-V layers along the length of the taper, reducing the reflection, and allowing for low loss coupling ( 1.2 dB) between these two regions [5]. The tapers are electrically driven in parallel with the gain region in order to minimize absorption.…”

High Performance Hybrid Silicon Evanescent Traveling Wave Electroabsorption Modulators

“…Furthermore, highly conned optical modes are resulted due to the large index contrast of silicon waveguides with silicon dioxide cladding and, consequently, reduction of waveguide bend radii leading to dense photonic integration is obtained. This has led to progress in passive devices such as compact lters, optical buers, photonic crystals, and wavelength multiplexer--demultiplexers [2]. The hybrid silicon evanescent platform, with the active IIIV materials transplanted to the silicon-over-insulator (SOI) wafers seems the most promising approach to active silicon.…”