A Distributed Bragg Reflector Silicon Evanescent Laser

Fang, Alexander W.; Koch, Brian R.; Jones, Richard E.; Lively, Erica; Liang, Di; Kuo, Ying-Hao; Bowers, John E.

doi:10.1109/lpt.2008.2003382

Cited by 115 publications

(54 citation statements)

References 7 publications

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“…Several single wavelength lasers on a III-V/silicon photonics platform have been demonstrated, both based on distributed feedback (DFB) and distributed Bragg reflector (DBR) geometries [11][12][13][14]. The demonstrated heterogeneous III-V/SOI DBR lasers consist of two passive Bragg reflector mirrors etched on silicon waveguides.…”

Section: Introductionmentioning

confidence: 99%

“…The demonstrated heterogeneous III-V/SOI DBR lasers consist of two passive Bragg reflector mirrors etched on silicon waveguides. Single mode operation was also demonstrated, with a lasing threshold of 65 mA and a maximum front mirror output power of 11 mW [14]. In the heterogeneously integrated DFB laser demonstrations, the optical mode is mainly guided by a silicon waveguide and the tail of the optical mode overlaps with the multiple quantum well gain region.…”

Section: Introductionmentioning

confidence: 99%

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Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

Keyvaninia¹,

Roelkens²,

Thourhout³

et al. 2013

Opt. Express

176

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Abstract:A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a silicon ring resonator for wavelength selection and two silicon Bragg grating reflectors as back and front mirrors. Single wavelength operation with a side mode suppression ratio higher than 45 dB is obtained. An output power up to 10 mW at 20 ⁰C and a thermooptic wavelength tuning range of 8 nm are achieved. The laser linewidth is found to be 1.7 MHz.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

Keyvaninia¹,

Roelkens²,

Thourhout³

et al. 2013

Opt. Express

176

View full text Add to dashboard Cite

show abstract

“…6). These same devices have shown 4 Gbit/sec data transmission for a bias of ~2×I th [25]. Clearly, employing short cavity devices (e.g., microring lasers) is an efficient approach to further increase the direct modulation bandwidth without sacrificing low power dissipation.…”

Section: Resultsmentioning

confidence: 99%

Electrically-pumped compact hybrid silicon microring lasers for optical interconnects

Liang¹,

Fiorentino²,

Okumura³

et al. 2009

Opt. Express

167

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Abstract:We demonstrate an electrically-pumped hybrid silicon microring laser fabricated by a self-aligned process. The compact structure (D = 50 µm) and small electrical and optical losses result in lasing threshold as low as 5.4 mA and up to 65 °C operation temperature in continuous-wave (cw) mode. The spectrum is single mode with large extinction ratio and small linewidth observed. Application as on-chip optical interconnects is discussed from a system perspective. ©2009 Optical Society of America

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“…Hydrophilic bonding, adhesion, and hybrid integration techniques for photonic microelectronic fabrication have generated a useful set of active and passive optical components for integration into microelectronic devices [2]. Some of the many photonic structures created include Fabry-Perot cavities [16,19], racetrack rings [20], mode-lock lasers [21], microdisks [22], distributed feedback lasers [23], distributed Bragg reflectors [24], micro-rings [25] lasers, amplifiers [26], PIN [27], metal-semiconductor-metal junctions [28] photodetectors, electroabsorption modulators [29], Mach-Zehnder interferometers [30], micro-disk modulators [31], and high-speed switches [32]. More advanced integration circuits have also been demonstrated [28,33].…”

Section: Integration Of Photonic Components Into Microelectronicsmentioning

confidence: 99%

Electrospinning for nano- to mesoscale photonic structures

et al. 2016

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Abstract:The fabrication of photonic and electronic structures and devices has directed the manufacturing industry for the last 50 years. Currently, the majority of small-scale photonic devices are created by traditional microfabrication techniques that create features by processes such as lithography and electron or ion beam direct writing. Microfabrication techniques are often expensive and slow. In contrast, the use of electrospinning (ES) in the fabrication of microand nano-scale devices for the manipulation of photons and electrons provides a relatively simple and economic viable alternative. ES involves the delivery of a polymer solution to a capillary held at a high voltage relative to the fiber deposition surface. Electrostatic force developed between the collection plate and the polymer promotes fiber deposition onto the collection plate. Issues with ES fabrication exist primarily due to an instability region that exists between the capillary and collection plate and is characterized by chaotic motion of the depositing polymer fiber. Material limitations to ES also exist; not all polymers of interest are amenable to the ES process due to process dependencies on molecular weight and chain entanglement or incompatibility with other polymers and overall process compatibility. Passive and active electronic and photonic fibers fabricated through the ES have great potential for use in light generation and collection in optical and electronic structures/ devices. ES produces fiber devices that can be combined with inorganic, metallic, biological, or organic materials for novel device design. Synergistic material selection and postprocessing techniques are also utilized for broad-ranging applications of organic nanofibers that span from biological to electronic, photovoltaic, or photonic. As the ability to electrospin optically and/or electronically active materials in a controlled manner continues to improve, the complexity and diversity of devices fabricated from this process can be expected to grow rapidly and provide an alternative to traditional resource-intensive fabrication techniques.

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A Distributed Bragg Reflector Silicon Evanescent Laser

Abstract: Abstract-We report a distributed Bragg reflector silicon evanescent laser operating continuous wave at 1596 nm. The lasing threshold and maximum output power are 65 mA and 11 mW, respectively. The device generates open eye-diagrams under direct modulation at data rates up to 4 Gb/s.

Cited by 115 publications

References 7 publications

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

Electrically-pumped compact hybrid silicon microring lasers for optical interconnects

Electrospinning for nano- to mesoscale photonic structures

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