1991
DOI: 10.1117/12.24472
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Integrated optical channel waveguides in silicon using SiGe alloys

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Cited by 2 publications
(2 citation statements)
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“…The investigation of Si photonic circuits started in the mid-1980s and has been ongoing since then. A significant volume of research has been conducted on various materials such as SiON [ 21 , 22 , 23 , 24 , 25 , 26 , 27 ], Si 3 N 4 [ 28 , 29 , 30 ], SiGe [ 31 , 32 , 33 , 34 ], SiO 2 [ 35 , 36 , 37 ], and SiC [ 38 , 39 , 40 ]. These materials have been explored concerning their compatibility with standard CMOS technology.…”
Section: Historymentioning
confidence: 99%
“…The investigation of Si photonic circuits started in the mid-1980s and has been ongoing since then. A significant volume of research has been conducted on various materials such as SiON [ 21 , 22 , 23 , 24 , 25 , 26 , 27 ], Si 3 N 4 [ 28 , 29 , 30 ], SiGe [ 31 , 32 , 33 , 34 ], SiO 2 [ 35 , 36 , 37 ], and SiC [ 38 , 39 , 40 ]. These materials have been explored concerning their compatibility with standard CMOS technology.…”
Section: Historymentioning
confidence: 99%
“…This paper discusses the early research on silicon photonics from the mid 1980's to the mid 1990s. Whilst a considerable amount of work had been carried in related materials (for example Si 3 N 4 [2][3][4][5], SiON [6][7][8][9][10][11][12][13][14], SiO 2 [15][16][17][18][19], SiGe [20][21][22][23][24], and SiC [25][26][27]) this paper focuses on single-crystal silicon devices and the ultimate goal of monolithic silicon integration. Whilst these other materials are compatible with standard CMOS technology, they potentially add complexity to the processing.…”
Section: Introductionmentioning
confidence: 99%