Breakthrough in Silicon Photonics Technology in Telecommunications, Biosensing, and Gas Sensing

Abstract

Silicon photonics has been an area of active research and development. Researchers have been working on enhancing the integration density and intricacy of silicon photonic circuits. This involves the development of advanced fabrication techniques and novel designs to enable more functionalities on a single chip, leading to higher performance and more efficient systems. In this review, we aim to provide a brief overview of the recent advancements in silicon photonic devices employed for telecommunication and sensing (biosensing and gas sensing) applications.

Critical Sensing Modalities for Hydrogen: Technical Needs and Status of the Field to Support a Changing Energy Landscape

“…93 In some cases these sensor designs are amenable to lithographic fabrication of waveguide devices that can also be integrated with light sources and detectors. In fact, recent advances in the integration of microphotonic elements such as waveguides, light sources and detectors in silicon-based electronics 94 should aid in packaging these sensors for commercial applications. When scaled these approaches have the potential to support the development of low cost, low power, optical sensors for distributed sensing.…”

Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys

“…where, the static ε o and high-frequency ε ∞ values of the dielectric functions provide the means of quantifying the polar nature of materials, so that further insight into the Fröhlich interaction (see Equation (11)) can be gained via the dielectric characterizations. It is to be noted that, except for 3C-SiC, no systematic calculations of the band structures and effective electron masses m * e are known for the GeC and SnC materials.…”

“…It is to be noted that, except for 3C-SiC, no systematic calculations of the band structures and effective electron masses m * e are known for the GeC and SnC materials. With Equation (11), and using the existing parameters (ε o , ε ∞ , ω LO , m * e ) for 3C-SiC from the literature [105][106][107], our calculation of α F (=0.576) has provided a value much higher than that reported by Adachi [130]. Interestingly, however, the calculation of polaron mass ( m * p /m e ≡ 0.243) using Equation ( 12) agrees very well with the theoretical result reported by Persson and Lindefelt [154].…”

“…Since the invention of Si-based transistors [1], the evolution to include them in radio frequency (RF) devices for microelectronics has been remarkable [2][3][4][5][6][7][8][9][10][11]. With the low processing costs, Si-technology has led to many achievements by incorporating electrodes, dielectrics, and other elements in different integrated circuits (ICs).…”

“…However, the differences in their electronegativity now play a vital role in carefully optimizing parameters to achieve epitaxial growth of heterostructures apposite for diverse device applications. Recently, the use of Si/SiGe has gained considerable attention for designing heterojunction bipolar transistors with cut-off frequencies > 10 GHz [11].…”