In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologicallyrelevant properties such as electrostatic tunability and strong light-matter interactions. However, no efficient photodetector in the telecommunication C-band has been realized with 2D transition metal dichalcogenide (TMDCs) materials due to their large optical bandgap. Here, we demonstrate a MoTe2-based photodetector featuring strong photoresponse (responsivity = 0.5 A/W) operating at 1550 nm on silicon micro ring resonator enabled by strain engineering of the transition-metal-dichalcogenide film. We show that an induced tensile strain of ~4% reduces the bandgap of MoTe2, resulting in large photo-response in the telecommunication wavelength, in otherwise photo-inactive medium when unstrained. Unlike Graphene-based photodetectors relying on a gapless band structure, this semiconductor-2D material detector shows a ~100X improved dark current enabling an efficient noise-equivalent power of just 90 pW/Hz 0.5 . Such strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems.

Cataloged from PDF version of article.Atomic force microscopy is being increasingly used to measure atomic-resolution force fields on sample surfaces, making correct interpretation of resulting data critically important. In addition to asymmetry, elastic deformations undergone by the microscope tip are thought to affect measurements. In this study, simple analytical potentials and a model tip apex were used to theoretically analyze how lateral tip stiffness affects force spectroscopy on the surface of NaCl(001). The results suggest that lateral deformations experienced by the tip lead to certain distortions in measured force spectra, the degree of which depends on lateral tip stiffness. (C) 2013 American Vacuum Society

We report a comparative study involving the formation of self-assembled molecular films by two types of alkanethiols (1-octadecanethiol and 1-dodecanethiol) on graphene grown via chemical vapor deposition, for heavy metal sensing applications. Scanning tunneling microscopy measurements confirm that the alkanethiol molecules can form localized, ordered molecular films on single-layer graphene despite the presence of structural and chemical irregularities. To test and compare the sensory characteristics associated with graphene functionalized by 1-octadecanethiol and 1-dodecanethiol, graphene-based field effect transistors are fabricated via photolithography on silicon dioxide substrates. Devices based on graphene functionalized with 1octadecanethiol are successfully employed to demonstrate the detection of mercury and lead ions at the 10 ppm level via Dirac point shifts, with a notable difference in response associated with the use of different heavy metal ions. On the other hand, devices based on graphene functionalized with 1-dodecanethiol exhibit p-type character, before and/or after exposure to heavy metal ions, complicating their use in heavy metal sensing in a straightforward fashion via Dirac point shifts.

Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional (2D) materials, resulting in an effective and continuous tuning of the physical properties. Ad hoc straining of 2D materials has demonstrated state of the art photonic devices including efficient photodetectors at telecommunication frequencies, enhancedmobility transistors, and on-chip single photon sources, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano-and microscopic properties as a function of a strong nonhomogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition metal dichalcogenide using conductive atomic force microscopy. We report a strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by 0.026m e and 0.03e for every percent of uniaxial strain, respectively, derived using band structure calculation based on the first-principles density functional theory. Furthermore, we demonstrate modulation of the effective Schottky barrier height by quantifying its alteration originating from a gradual reduction of the conduction band minima as a function of tensile strain. Such spatially textured electronic behavior via surface topography-induced strain variations in atomisticlayered materials at the nanoscale opens up exciting opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities, such as for electronics, nanophotonics, flextronics, or smart cloths.

Viscoelastic characterization of materials at the micro- and nanoscales is commonly performed with the aid of force-distance relationships acquired using atomic force microscopy (AFM). The general strategy for existing methods is to fit the observed material behavior to specific viscoelastic models, such as generalized viscoelastic models or power-law rheology models, among others.  Here we propose a new method to invert and obtain the viscoelastic properties of a material through the use of the Z-transform, without using a model.  We present the rheological viscoelastic relations in their classical derivation and their Z-domain correspondence.  We illustrate the proposed technique on a model experiment involving a traditional ramp-shaped force-distance AFM curve, demonstrating good agreement between the viscoelastic characteristics extracted from the simulated experiment and the theoretical expectations. We also provide a path for calculating standard viscoelastic responses from the extracted material characteristics.  The new technique based on the Z-transform is complementary to previous model-based viscoelastic analyses and can be advantageous with respect to Fourier techniques due to its generality.  Additionally, it can handle the unbounded inputs traditionally used to acquire force-distance relationships in AFM, such as “ramp” functions, in which the cantilever position is displaced linearly with time for a finite period of time.

Cell responses to external radiofrequencies (RF) are a fundamental problem of much scientific research, clinical applications, and even daily lives surrounded by wireless communication hardware. In this work, we report an unexpected observation that the cell membrane can oscillate at the nanometer scale in phase with the external RF radiation from kHz to GHz. By analyzing the oscillation modes, we reveal the mechanism behind the membrane oscillation resonance, membrane blebbing, the resulting cell death, and the selectivity of plasma-based cancer treatment based on the difference in the membrane's natural frequencies among cell lines. Therefore, a selectivity of treatment can be achieved by aiming at the natural frequency of the target cell line to focus the membrane damage on the cancer cells and avoid normal tissues nearby. This gives a promising cancer therapy that is especially effective in the mixing lesion of the cancer cells and normal cells such as glioblastoma where surgical removal is not applicable. Along with these new phenomena, this work provides a general understanding of the cell coupling with RF radiation from the externally stimulated membrane behavior to the cell apoptosis and necrosis.

Recently, much research has been performed involving the mechanical analysis of biological and polymeric samples with the use of Atomic Force Microscopy (AFM). Such materials require careful treatments which consider the rate-dependence of their viscoelastic response. Here, we review the fundamental theories of linear viscoelasticity, as well as their application to the analysis of AFM spectroscopy data. An outline of general viscoelastic mechanical phenomena is initially given, followed by a brief outline of AFM techniques. Then, an extensive outline of linear viscoelastic material models, as well as contact mechanics descriptions of AFM systems, are presented.

Probe-induced soft sample damage in atomic force microscopy (AFM), as well as the resulting alteration of local mechanical and electrical properties of the material are explored, specifically comparing contact-mode and intermittent-contact-mode imaging methods. In our experiments, performed on conductive polymer films, induced changes are present in contact-mode imaging while they are negligible or absent in tapping-mode imaging. To understand this result, a viscoelastic parameter extraction is performed, which suggests that permanent sample deformation can readily occur for tip-sample interactions with a duration on the timescale of contact-mode interactions. Using the extracted viscoelastic parameters, a dynamic AFM simulation is conducted, which suggests that the material responds more elastically with reduced or absent sample damage in tapping-mode AFM, due to the higher rate of mechanical deformation and shorter timescales.