Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits

Maiti, Rishi; Patil, Chandraman; Saadi, M. A. S. R.; Xie, Ti; Azadani, Javad G.; Uluutku, Berkin; Amin, Rubab; Briggs, Adrian; Miscuglio, Mario; Thourhout, Dries Van; Solares, Santiago D.; Low, Tony; Agarwal, Ritesh; Bank, Seth R.; Sorger, Volker J.

doi:10.1038/s41566-020-0647-4

Cited by 196 publications

(177 citation statements)

References 61 publications

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Section: Waveguide‐integrated Photodetectorsmentioning

confidence: 99%

“…Usually, the total bandwidth is influenced by RC response and carrier transit time [ 191 ]

f_{3 dB} = {(\frac{1}{f_{RC}^{2}} + \frac{1}{f_{transit}^{2}})}^{- 1 / 2}

where

f_{RC}

and

f_{transit}

are the bandwidth limited by RC and transit time limitations, respectively. The transit time (

τ_{transit}

) is given by [ 289 ]

τ_{transit} = \frac{L^{2}}{2 \cdot μ \cdot V}

where μ is the carrier mobility and L is the device length. Ultrafast carrier mobility leads to improving

f_{transit}

; thereby, the intrinsic bandwidth of a graphene photodetector in free space was up to 262 GHz.…”

Section: Waveguide‐integrated Photodetectorsmentioning

confidence: 99%

See 1 more Smart Citation

Two‐Dimensional Materials for Integrated Photonics: Recent Advances and Future Challenges

Yin

et al. 2021

Small Science

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With the development of novel optoelectronic materials and nanofabrication technologies, integrated photonics is a rapidly developing field that will promote the development and application of next‐generation photonic devices. In recent years, emerging two‐dimensional materials (2DMs) including graphene, transition metal dichalcogenides (TMDCs), black phosphorus (BP), and ternary compounds show many complementarities and unique characteristics over those of traditional optoelectronic materials including broadband absorption, ultrafast carrier mobility, strong nonlinear effects, and compatibility for monolithic integration. Herein, the recent progress on waveguide‐integrated active devices for a full photonic circuit based on 2DMs is reviewed. Both the development of nanofabrication techniques and the working mechanism of active photonic components based on 2DMs containing integrated light sources, waveguide‐integrated modulators, photodetectors, as well as some advanced 2DMs‐based optoelectronic devices are illustrated in detail. In the end, the existing challenges and perspectives on novel 2DMs‐integrated photonics are summarized and discussed.

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Section: Waveguide‐integrated Photodetectorsmentioning

confidence: 99%

“…Usually, the total bandwidth is influenced by RC response and carrier transit time [ 191 ]

f_{3 dB} = {(\frac{1}{f_{RC}^{2}} + \frac{1}{f_{transit}^{2}})}^{- 1 / 2}

where

f_{RC}

and

f_{transit}

are the bandwidth limited by RC and transit time limitations, respectively. The transit time (

τ_{transit}

) is given by [ 289 ]

τ_{transit} = \frac{L^{2}}{2 \cdot μ \cdot V}

where μ is the carrier mobility and L is the device length. Ultrafast carrier mobility leads to improving

f_{transit}

; thereby, the intrinsic bandwidth of a graphene photodetector in free space was up to 262 GHz.…”

Section: Waveguide‐integrated Photodetectorsmentioning

confidence: 99%

Two‐Dimensional Materials for Integrated Photonics: Recent Advances and Future Challenges

Yin

et al. 2021

Small Science

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Section: Piezophototronic Effect and Its Applications For 2d Materialsmentioning

confidence: 99%

“…[121] Moreover, Maiti et al recently showed a strain-engineered integrated photodetector based on multilayer 2H-MoTe 2 and silicon microring resonator in the telecommunication C-band. [122] Through the local tensile strain, the bandgap of MoTe 2 shifted toward 0.8 eV when the material was wrapped around a nonplanarized silicon waveguide. Accordingly, functions including photoresponse (responsivity 0.5 A W −1 ), ultralow dark current (13 nA), noise equivalent power (90 pW Hz −0.5 ), and operation frequency (35 MHz) were successfully tuned.…”

Section: Photodetectorsmentioning

confidence: 99%

“…Strain engineering has been proven to allow more characteristics tuning and delicate manipulations for various devices such as optical modulators [135] and sensors, [122,136,137] which is realized through tuning the bandgap energy in semiconductors by the applications of external strain. [138][139][140][141] For instance, experiments on bandgap changes in four different monolayer TMDCs via strain engineering have been demonstrated by Frisenda et al [135] With the large thermal expansion in a polymer substrate, a controllable uniform biaxial tensile strain on the single-layer TMDCs flakes can be achieved, resulting in a redshift of the bandgap (largest in WS 2 and lowest in MoSe 2 ).…”

Section: Other Applicationsmentioning

confidence: 99%

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Tunable Optical Properties of 2D Materials and Their Applications

Ren

et al. 2020

Advanced Optical Materials

120

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unlimited possibilities in the improvement of the performances of optoelectronic devices. [19-23] Beyond that, the properties of 2D materials can be tuned in situ by using different approaches [24-26] to expand the functionalities of optoelectronic devices. Out of them, the tunability in their optical properties has attracted great interest over the past decades where researchers dedicated to discovering various tuning methods to realize desired outcomes. [27,28] More excitingly, owing to the unprecedented electronic properties, high stretchability, magnetism, and thermal conductivity of 2D materials, different tuning approaches such as electrical gating, external strain stimuli, a static magnetic field, surface acoustic waves (SAWs), and thermal heating can be simultaneously adopted to participate the light-matter interaction, leading to the tailored and synergetic optical response of 2D materials. [29] Table 1 illustrates a brief advantages and weaknesses analysis between different optical tuning approaches of 2D and non-2D materials. There is a huge potential to revolutionize the optoelectronic devices by incorporating 2D materials with tunable optical properties. [30,31] So far, researchers have achieved flagship milestones in this area where a diverse set of high-performance optical devices are realized including modulators, photodetectors, optical sources, and optical switches. [32] In this review, we primarily focus on the theoretical and experimental researches of optical effects causing by various external stimuli in 2D materials. In Section 2, 2D materials with electro-optic effect and its application will be discussed, followed by piezophototronic effect and its application in Section 3. In Section 4, 2D materials with magneto-optic effect and its application will be discussed. Then, acousto-optic (AO) effect and its application, and thermo-optic (TO) effect and its application will be discussed in Sections 4 and 5, respectively. In the last section, the conclusion and perspective will be provided. 2. Electro-Optic Effect and Its Applications for 2D Materials 2.1. 2D Materials with Electro-Optic Effect In a broad sense, electro-optic effect is about an optical property change in the materials when applying an electric field. As shown in Figure 1, the refractive index of the material can be tuned in the presence of electric field due to the variation of charge carrier density. [29] This effect involves several Recent efforts have been heavily devoted to the development of next-generation optoelectronic devices based on 2D materials, due to their unique optical properties that are distinctly different from those of bulk counterparts. Given that the feature of flexible tunability is highly desired, various approaches have been demonstrated to efficiently modulate the optical properties, eventually enabling peculiar functionalities or realizing high-performance nanoscale devices. Here, this review focuses on recent advances in tuning the optical properties of 2D materials by external stimuli including elec...

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Two‐Dimensional Semiconductors for Photodetection

Sun¹,

Yang²,

Yao³

et al. 2022

Digital Encyclopedia of Applied Physics

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Since the discovery of graphene, two‐dimensional (2D) semiconductors have attracted intensive interest due to their unique properties. In particular, 2D semiconductors possess unique physics and superior performance for light–matter interactions in a comparison with three‐dimensional (3D) bulk counterparts. In this article, the general electronic and optoelectronic properties of 2D semiconductors will be firstly introduced. Then the technical approaches for tuning their electronic properties including both energy bandgap engineering and doping will be presented. Electrical contacts of 2D semiconductor devices as another technical challenge will also be discussed. Finally, the application of 2D semiconductors in photodetectors, including both the light–matter interaction mechanisms and the metric benchmarking of recent advances will be summarized.

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Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits

Cited by 196 publications

References 61 publications

Two‐Dimensional Materials for Integrated Photonics: Recent Advances and Future Challenges

Two‐Dimensional Materials for Integrated Photonics: Recent Advances and Future Challenges

Tunable Optical Properties of 2D Materials and Their Applications

Two‐Dimensional Semiconductors for Photodetection

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