Abstract-Channel temperature is a key parameter for accelerated life testing in GaN HEMTs. It is assumed that selfheating is similar in RF and DC operation and that DC test results can be applied to RF operation. We investigate whether this assumption is valid by using an experimentally calibrated, combined electrical and thermal model to simulate Joule heating during RF operation and compare this to DC self-heating at same power dissipation. Two cases are examined and the implications for accelerated life testing are discussed: Typical (30 V) and high (100 V) drain voltages.
Current transient spectroscopy (CTS), was used to measure the impact of neutron irradiation on output currentlimiting charge traps in AlGaN/GaN HEMTs with time constants from 10 ms to 1800 s. We find that coupling between discrete traps was apparent, in contrast to the commonly employed assumption of independent trap (dis)charging, and increased after 14 MeV neutron irradiation of 2 × 10 13 n/cm 2 and above. Irradiation to a high dose of as much as 7.8 × 10 14 n/cm 2 , which is comparable to eight years exposure to a harsh radiation environment such as the ITER neutral beam injector prototype, increased trapped charge density, and reduced transient drain current to as little as 75% of its equilibrium value. These changes are consistent with displacement damage estimates based on radiation transport calculations.
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