Proton induced trapping effect on space compatible GaN HEMTs

Stocco, Antonio; Gerardin, Simone; Bisi, Davide; Dalcanale, Stefano; Rampazzo, F.; Meneghini, Matteo; Meneghesso, Gaudenzio; Grünenpütt, Jan; Lambert, Benoît; Blanck, H.; Zanoni, Enrico

doi:10.1016/j.microrel.2014.07.120

Cited by 20 publications

(21 citation statements)

References 18 publications

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“…The E2 and E4 traps are believed by the authors of Ref. [337] to be located in the region below the gate which seems to be in agreement with conclusions of DLTS-based measurements. The E2 (ETB4) traps role in changing the trapping in AC transistor parameters and their degradation with electrical stressing has already been discussed in the previous subsection, where the traps in question were assigned to defects in the GaN buffer at the AlGaN/GaN interface.…”

Section: Radiation Effects In Gan-based Hemtssupporting

confidence: 86%

“…[269], and the E2 and E4 traps parameters in Ref. [337] are very reasonably close to the ETB4 and ETB5 electron traps parameters determined in DLTS measurements on AlGaN/GaN/Si HEMTs (see Ref. [267] and Table 4 above).…”

Section: Radiation Effects In Gan-based Hemtssupporting

confidence: 75%

“…[337] for proton irradiated transistors designed for use in space applications. The authors found that 3 MeV proton irraditation of AlGaN/GaN HEMTs prepared on SiC substrates did not vary much the DC characteristics of devices for fluences up to 10 14 cm À2 .…”

Section: Radiation Effects In Gan-based Hemtsmentioning

confidence: 99%

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Deep traps in GaN-based structures as affecting the performance of GaN devices

Polyakov

Lee

2015

Materials Science and Engineering: R: Reports

207

177

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Section: Radiation Effects In Gan-based Hemtssupporting

confidence: 86%

Section: Radiation Effects In Gan-based Hemtssupporting

confidence: 75%

See 1 more Smart Citation

Deep traps in GaN-based structures as affecting the performance of GaN devices

Polyakov

Lee

2015

Materials Science and Engineering: R: Reports

207

177

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“…2,[136][137][138][139][140][141][142][143][144][145][146][147][148][149][150][151][152][153][154] The majority of deep electron traps in GaN are most likely dislocation-related and that probably explains the prominent role of dislocations in the trapping, gate leakage, subthreshold current leakage, and degradation in AlGaN/GaN HEMTs. The gate leakage in AlGaN/GaN HEMTs seems to be promoted by open-core screw dislocations and, in InAlN/GaN Q48…”

Section: Changes In Gan-based Hemt Performance After Irradiationmentioning

confidence: 99%

“…Comparison between Schottky diodes and high electron-mobility transistors suggests that the degradation in both types of devices is predominantly due to carrier removal and mobility degradation caused by radiation-induced defect centers in the crystal lattice, with interface disorder playing a relatively insignificant part in overall device degradation. [145][146][147][148][149][150][151][152][153][154][155] In summary, the main effects of radiation damage in GaN-based HEMTs can be noted as follows:…”

Section: Ecs Journal Of Solid State Science and Technology 5 (2) Q35mentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

269

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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Proton Energy Loss in GaN

Duboz

Zucchi

Frayssinet

et al. 2021

Physica Status Solidi (b)

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The proton energy loss in GaN in an energy range between 0 and 65 MeV is investigated. The energy of protons generated by a cyclotron at about 65 MeV is varied by inserting an energy‐absorbing medium of varying thickness. The precise modeling of the GaN Schottky diode response as a function of the absorbing medium thickness allows us to demonstrate that the energy absorption loss in GaN precisely follows the Bethe theory. In addition, the region of the detector contributing to its response to a proton beam, which is of prime importance for proton detector optimization, can be identified.

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Proton induced trapping effect on space compatible GaN HEMTs

Cited by 20 publications

References 18 publications

Deep traps in GaN-based structures as affecting the performance of GaN devices

Deep traps in GaN-based structures as affecting the performance of GaN devices

Review—Ionizing Radiation Damage Effects on GaN Devices

Proton Energy Loss in GaN

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