Non-government funders (NGFs) are major contributors to the third sector. Literature on this private philanthropic world is limited and access to stakeholders and practices within these institutions is a barrier to empirical research. With public oversight limited to nominal federal tax law disclosure, issues of accountability are under-researched. We examine how NGFs 'account' for their grant making decisions in an Australian context. Focused on how NGFs assess likely success, it finds that assurance is constructed as part of the decision-making process through a more socialising form of accountability, based on personal interaction, in contrast to a reliance on hierarchical accountability and transparency.

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This study investigated the laser‐induced damage arising from 266 and 532 nm laser ablation of SiNx films on alkaline textured Si surfaces with nanosecond and picosecond pulse durations using a combination of optical‐thermal simulations and measurements of carrier recombination current density. Simulations predict that the melting depth is limited to within 150 nm of the SiNx/Si surface after 266 nm ps laser irradiation due to the greater absorption in both the SiNx and Si resulting in more direct ablation, while temperatures exceeding the melting temperature of Si are predicted to extend up to 1000 nm into the Si substrate with 532 nm ps pulses leading primarily to spallation. Ablation of the SiNx by 266 nm ps irradiation is predicted to be more homogeneous on smaller sized pyramids due to the increased absorption of double‐bounce reflected light on the pyramid faces. This finding has implications for applications requiring uniform ablation of dielectrics on textured Si surfaces. Ablation of SiNx by the longer wavelength 532 nm ps pulses also increases carrier recombination compared to that incurred with 266 nm ps pulses due to the increased melting depth. Longer ns pulses result in less steep temperature gradients and, for 266 nm pulses, an increased melting depth compared to ps pulses. Consequently, shorter ps UV pulses are preferred for SiNx ablation on Si surfaces due to their reduced laser damage penetration, whereas the less steep temperature gradients resulting from ns 532 nm pulses are beneficial for laser doping to form selective emitters.

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Plated copper (Cu) contacts for silicon (Si) solar cells are an attractive alternative material to conventional screenprinted silver, but there are unresolved questions on the long-term integrity of plated contact structures. In this work, we perform characterization on plated Cu contacts from encapsulated cells that were degraded during extended exposure to damp heat (DH) stress. First, using energy-dispersive X-ray spectroscopy, we find evidence of Cu outdiffusion upward through capping layers made of both tin and silver applied with light-induced plating, resulting in a layer of Cu on the outer contact surface. We hypothesize that if Cu is mobile in the module, it may eventually find some route by which to enter the Si cells where it can degrade performance. Subsequently, in several types of Cu-plated, DH-degraded cells, secondary ion mass spectrometry detects elevated levels of Cu at the Si surface and in the Si cell bulk, which suggests that Cu can indeed migrate from contacts into Si over the course of DH stress.