Refined nickel nucleation and plated metal adhesion induced by pulsed light-induced plating on picosecond laser-ablated silicon solar cells

Shen, Xiaowei; Hsiao, Pei‐Chieh; Wang, Zhimeng; Phua, Benjamin; Lim, Sean; Lennon, Alison

doi:10.1016/j.solmat.2022.111638

Cited by 3 publications

(2 citation statements)

References 49 publications

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“…At present, the main metallization methods reported to replace screen printing silver paste are as follows: electroplating (electrochemical deposition metallization) [ 6 , 7 , 8 ], laser transfer printing [ 9 , 10 ], inkjet printing [ 11 , 12 , 13 ], etc. Electroplating has emerged as a main research subject among these methods, owing to its significant cost reduction in metallization by employing copper electrodes.…”

Section: Introductionmentioning

confidence: 99%

Enhancing Adhesion and Reducing Ohmic Contact through Nickel–Silicon Alloy Seed Layer in Electroplating Ni/Cu/Ag

Wang,

Liu,

Chen

et al. 2024

Materials

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Due to the lower cost compared to screen-printed silver contacts, the Ni/Cu/Ag contacts formed by plating have been continuously studied as a potential metallization technology for solar cells. To address the adhesion issue of backside grid lines in electroplated n-Tunnel Oxide Passivating Contacts (n-TOPCon) solar cells and reduce ohmic contact, we propose a novel approach of adding a Ni/Si alloy seed layer between the Ni and Si layers. The metal nickel layer is deposited on the backside of the solar cells using electron beam evaporation, and excess nickel is removed by H2SO4:H2O2 etchant under annealing conditions of 300–425 °C to form a seed layer. The adhesion strength increased by more than 0.5 N mm−1 and the contact resistance dropped by 0.5 mΩ cm2 in comparison to the traditional direct plating Ni/Cu/Ag method. This is because the resulting Ni/Si alloy has outstanding electrical conductivity, and the produced Ni/Si alloy has higher adhesion over direct contact between the nickel–silicon interface, as well as enhanced surface roughness. The results showed that at an annealing temperature of 375 °C, the main compound formed was NiSi, with a contact resistance of 1 mΩ cm−2 and a maximum gate line adhesion of 2.7 N mm−1. This method proposes a new technical solution for cost reduction and efficiency improvement of n-TOPCon solar cells.

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Section: Introductionmentioning

confidence: 99%

Enhancing Adhesion and Reducing Ohmic Contact through Nickel–Silicon Alloy Seed Layer in Electroplating Ni/Cu/Ag

Wang,

Liu,

Chen

et al. 2024

Materials

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“…Among the numerous new energy sources, solar cells are becoming increasingly mature and occupy an important proportion in the new energy industry. For silicon wafer photovoltaic (PV) technology, which accounts for 95% of the total solar PV production, [ 1 ] the metallization step is crucial interest. At present, screen printing (SP) is the main metallization technology for producing industrial silicon solar cells, which has the characteristics of simplicity, speed, and suitability for mass production.…”

Section: Introductionmentioning

confidence: 99%

Investigating the Application and Impact of Laser Etching Technology in the Fabrication of Solar Cells

Wang,

Cheng,

Wang

et al. 2024

Physica Status Solidi (a)

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The most crucial initial step in the metallization process of electroplating is the local contact openings in dielectric layers. In this article, an ultraviolet picosecond laser (UV‐ps), is used to open the front and back dielectric layer of the precursor of n‐TOPCon solar cells. By changing the laser parameters and spot overlap rate, the surface morphology of laser etching under different conditions is obtained and characterized by optical microscope and scanning electron microscope. The results indicate that there are three separate laser shock zones in the dielectric layer under the action of Gaussian light spot, and the corresponding ablation mechanisms are proposed. The longitudinal distribution of B element is characterized by secondary ion mass spectrometry to explore the effect of laser on its pn junction. In addition, the electrical characterization of lifetime photoluminescence is measured and calibrated using WCT120, and this indicates that the majority of the amorphous silicon is recrystallized when applying a fast firing oven process, and this hence improve the minority carrier lifetime and implied open‐circuit voltage. The laser damage to the emitter at the laser‐ablated regions is investigated using the emitter saturation current density, J0laser extracted by WCT120.

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Superb Improvement of the Picosecond Laser Ablation of Dielectrics Via a Top-Hat Beam for High-Efficiency Solar Cells

Qian,

Shen,

Hong

2024

J. Electron. Mater.

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Refined nickel nucleation and plated metal adhesion induced by pulsed light-induced plating on picosecond laser-ablated silicon solar cells

Cited by 3 publications

References 49 publications

Enhancing Adhesion and Reducing Ohmic Contact through Nickel–Silicon Alloy Seed Layer in Electroplating Ni/Cu/Ag

Enhancing Adhesion and Reducing Ohmic Contact through Nickel–Silicon Alloy Seed Layer in Electroplating Ni/Cu/Ag

Investigating the Application and Impact of Laser Etching Technology in the Fabrication of Solar Cells

Superb Improvement of the Picosecond Laser Ablation of Dielectrics Via a Top-Hat Beam for High-Efficiency Solar Cells

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