This paper addresses the difficulty of designing 1-V capable analog circuits in standard digital complementary metal-oxide-semiconductor (CMOS) technology. Design techniques for facilitating 1-V operation are discussed and 1-V analog building block circuits are presented. Most of these circuits use the bulk-driving technique to circumvent the metaloxide-semiconductor field-effect transistor turn-on (threshold) voltage requirement. Finally, techniques are combined within a 1-V CMOS operational amplifier with rail-to-rail input and output ranges. While consuming 300 W, the 1-V rail-to-rail CMOS op amp achieves 1.3-MHz unity-gain frequency and 57 phase margin for a 22-pF load capacitance.
This paper presents a comprehensive short circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short circuit capability of three types of commercial 1200 V SiC MOSFETs is tested under various conditions, with case temperatures from 25 o C to 200 o C and DC bus voltages from 400 V to 750 V. It is found that the commercial SiC MOSFETs can withstand short circuit current for only several microseconds with a DC bus voltage of 750 V and case temperature of 200 o C. The experimental short circuit behaviors are compared and analyzed through numerical thermal dynamic simulation. Specifically, an electro-thermal model is built to estimate the device internal temperature distribution, considering the temperature dependent thermal properties of SiC material. Based on the temperature information, a leakage current model is derived to calculate the main leakage current components (i.e. thermal, diffusion, and avalanche generation currents). Numerical results show that the short circuit failure mechanisms of SiC MOSFETs can be thermal generation current induced thermal runaway or high temperature related gate oxide damage.
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