Methodology for Wide Band-Gap Device Dynamic Characterization

Zhang, Zheyu; Guo, Ben; Wang, Fei Fred; Jones, Edward A.; Tolbert, Leon M.; Blalock, Benjamin J.

doi:10.1109/tpel.2017.2655491

Cited by 210 publications

(67 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Probes and oscilloscopes of adequate bandwidth must be used for sufficient accuracy [16]. For measuring the voltage waveform across the diode capacitance, vC-meas, a Tektronix passive voltage probe (P6139B) of 500 MHz bandwidth was used.…”

Section: Methodsmentioning

confidence: 99%

The Correct Equation for the Current Through Voltage-Dependent Capacitors

et al. 2020

View full text Add to dashboard Cite

Two different equations for the current through voltage-dependent capacitances are used in the literature. One equation is obtained from the time derivative of charge that is considered as capacitancevoltage product: dQ/dt=d[C(V)V]/dt=C(V)[dV/dt]+V[dC(V)/dt]. In the second equation, the term V[dC(V)/dt] does not exist: dQ/dt= C(V)[dV/dt]. This paper clears the ongoing confusion caused by the difference between these two equations. We use the voltage-dependent parasitic capacitance of a commercial Schottky diode in reverse bias mode to test experimentally both equations. The result is that it is incorrect to add the term V[dC(V)/dt] in the first equation with the measured capacitance. We also perform a theoretical analysis, which shows that the differential capacitance, C(V)=dQ/dV, in the correct current equation corresponds to the physical parameters of the diode capacitance.

show abstract

Section: Methodsmentioning

confidence: 99%

The Correct Equation for the Current Through Voltage-Dependent Capacitors

et al. 2020

View full text Add to dashboard Cite

show abstract

“…In order to capture the rising and falling edges of the high-speed switching transients of above parameters with adequate signal fidelity, high bandwidth measurement tools are indispensable. Both differential and passive probes may be used for voltage measurement depending on the PSD to be characterized; however, they have their own pros and cons [24]. The measurement of current requires a break in the power circuit to insert the measurement device.…”

Section: B Case Study -Dpt Vs Boost Converter Switching Resultsmentioning

confidence: 99%

“…These two act as negative feedback from the power loop to gate loop leading to slower switching and thus increased switching losses [12]. and are key contributors of parasitic ringing but the ringing due to fast switching is more sensitive to [12], [24]. In this work, substantial design focus is given to reduce while planning the PCB layout of power board.…”

Section: Dpt Power Board Designmentioning

confidence: 99%

“…During pulse#1, the desired test current ( ) is established in , which remains fairly constant at the end of pulse#1 and beginning of pulse#2 due to the short delay time applied between the two pulses and high load inductance. The load inductance is selected to be high enough to limit the inductive current ripple ∆ during the switching transients [24]. By re-arranging the fundamental inductor equation, we can derive an expression for , as shown in (1) below.…”

Section: E Inductor Design Criteriamentioning

confidence: 99%

“…The practical experimental results obtained from the proposed setup has been used to tune simulated PSD models to improve accuracy so that the models can emulate real PSDs in terms of overall performance, loss behavior, voltage and current overshoots [19], [22]. The switching performance of a PSD is highly affected by layout of the DPT power circuit; hence, most of the technical literatures discusses PCB design recommendations to minimize effect of parasitic elements on the SC results [13], [23]- [24]. These evaluation boards consist the half-bridge power stage, which represent the DPT power circuit.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Conceptual Design and Demonstration of an Automatic System for Extracting Switching Loss and Creating Data Library of Power Semiconductors

Ghosh

Prendergast

et al. 2020

IEEE Open J. Power Electron.

View full text Add to dashboard Cite

A switching characterization (SC) test of power semiconductor devices (PSDs) gives us significant insight into the dynamic switching behavior of the device under various operating conditions. A double pulse test (DPT) is a widely used method for evaluating switching performance parameters of a PSD such as its switching losses, switching speed (di/dt, dv/dt), turn-on and turn-off times etc. The scientific information obtained from analysis of DPT results of a PSD helps in predicting its thermo-electric performance in a target power electronic converter. With conventional DPT setups, it is a time-consuming and error-prone process to manually conduct these tests under several permutations of test parameters and thereafter analyze the experimental data manually. This work presents a newly developed automated SC test system, which can run tests one after another, once the desired test parameters are entered in a graphic user interface. The test-control system also enables recording and systematic processing of the experimental switching data to deliver usable characterization results. The automatic, compact and modular design allows the proposed SC test platform to stand out from the conventional DPT setups. The design principles are experimentally verified by implementing a hardware prototype capable of testing PSDs up to 1000V, 60A, 250°C.

show abstract

Power Semiconductor Devices

2023

Design of Three‐Phase AC Power Electronics Converters

View full text Add to dashboard Cite

Methodology for Wide Band-Gap Device Dynamic Characterization

Cited by 210 publications

References 27 publications

The Correct Equation for the Current Through Voltage-Dependent Capacitors

The Correct Equation for the Current Through Voltage-Dependent Capacitors

Conceptual Design and Demonstration of an Automatic System for Extracting Switching Loss and Creating Data Library of Power Semiconductors

Power Semiconductor Devices

Contact Info

Product

Resources

About